S6035D datasheet, PDF - EEWORLD Datasheet

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S6035D: DescriptionSilicon Controlled Rectifier, 35A I(T)RMS, 35000mA I(T), 600V V(DRM), 1 Element; CategoryAnalog mixed-signal IC Trigger device; File Size714KB，10 Pages; ManufacturerLoras Industries Inc.

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S6035D Overview

Silicon Controlled Rectifier, 35A I(T)RMS, 35000mA I(T), 600V V(DRM), 1 Element

S6035D Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Loras Industries Inc.
package instruction	POST/STUD MOUNT, O-MUPM-D3
Reach Compliance Code	unknown
Shell connection	ISOLATED
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	150 V/us
Maximum DC gate trigger current	25 mA
Maximum DC gate trigger voltage	2 V
Maximum holding current	40 mA
JESD-30 code	O-MUPM-D3
JESD-609 code	e0
Maximum leakage current	1 mA
On-state non-repetitive peak current	300 A
Number of components	1
Number of terminals	3
Maximum on-state current	35000 A
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	35 A
Maximum repetitive peak off-state leakage current	50 µA
Off-state repetitive peak voltage	600 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	SOLDER LUG
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR

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S6035D Related Products

	S6035D	S0308FS21	C107D	TL4003SGA
Description	Silicon Controlled Rectifier, 35A I(T)RMS, 35000mA I(T), 600V V(DRM), 1 Element	Silicon Controlled Rectifier, 8A I(T)RMS, 8000mA I(T), 30V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 4A I(T)RMS, 2400mA I(T), 400V V(DRM), 1 Element, TO-202AB	Silicon Controlled Rectifier, 3A I(T)RMS, 3000mA I(T), 400V V(DRM), 1 Element
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
package instruction	POST/STUD MOUNT, O-MUPM-D3	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	IN-LINE, R-PSIP-W3
Reach Compliance Code	unknown	unknown	unknown	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Maximum DC gate trigger current	25 mA	0.2 mA	0.5 mA	7 mA
Maximum DC gate trigger voltage	2 V	0.8 V	0.8 V	3 V
Maximum holding current	40 mA	6 mA	6 mA	30 mA
JESD-30 code	O-MUPM-D3	R-PSFM-T3	R-PSFM-T3	R-PSIP-W3
JESD-609 code	e0	e0	e0	e0
Maximum leakage current	1 mA	0.1 mA	0.01 mA	1 mA
On-state non-repetitive peak current	300 A	100 A	15 A	30 A
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum on-state current	35000 A	8000 A	2400 A	3000 A
Maximum operating temperature	110 °C	110 °C	100 °C	110 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	METAL	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	POST/STUD MOUNT	FLANGE MOUNT	FLANGE MOUNT	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum rms on-state current	35 A	8 A	4 A	3 A
Maximum repetitive peak off-state leakage current	50 µA	5 µA	10 µA	20 µA
Off-state repetitive peak voltage	600 V	30 V	400 V	400 V
surface mount	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	SOLDER LUG	THROUGH-HOLE	THROUGH-HOLE	WIRE
Terminal location	UPPER	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR	SCR	SCR
Maker	Loras Industries Inc.	Loras Industries Inc.	-	Loras Industries Inc.
Shell connection	ISOLATED	ANODE	ANODE	-
Critical rise rate of minimum off-state voltage	150 V/us	20 V/us	-	30 V/us

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