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2N6173

Description
SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR
CategoryAnalog mixed-signal IC    Trigger device   
File Size735KB,5 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
Download Datasheet Parametric View All

2N6173 Overview

SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING TRIODE THYRISTOR

2N6173 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknow
JESD-609 codee0
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Terminal surfaceTin/Lead (Sn/Pb)
Maximum time at peak reflow temperatureNOT SPECIFIED
Trigger device typeSCR
Base Number Matches1
DIGITRON SEMICONDUCTORS
2N3870-2N3873
2N3896-2N3899
2N6171-2N6174
SILICON CONTROLLED RECTIFIERS
REVERSE BLOCKING TRIODE THYRISTOR
35 AMPS RMS, 100-800 VOLTS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
(T
C
= 100°C unless otherwise noted)
Rating
Peak repetitive forward or reverse blocking voltage
(T
J
= -40 to 100°C, ½ sine wave, 50-400 Hz, gate open)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
(1)
Symbol
Value
Unit
V
RRM
or V
DRM
100
200
400
600
Volts
Peak non-repetitive forward or reverse blocking voltage
(t
5ms)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
Average on-state current
(T
C
= -40 to 65°C)
(T
C
= 85°C)
(2)
V
RSM
or V
DSM
150
330
660
700
22
11
350
510
20
0.5
2
10
-40 to 100
-40 to 150
30
0.9
1
Volts
I
T(AV)
Amps
Peak non-repetitive surge current
(one cycle, 60Hz) (T
C
= 65°C)
Circuit fusing
(T
C
= -40 to 100°C)
(t = 1 to 8.3 ms)
Peak gate power
Average gate power
Peak forward gate current
Peak gate voltage
Operating junction temperature range
Storage temperature range
Stud torque
Thermal resistance, junction to case
2N3870 – 2N3873, 2N3896-2N3899
2N6171-2N6174
I
TSM
Amps
I
2
t
P
GM
P
G(AV)
I
GM
V
GM
T
J
T
stg
-
R
ӨJC
A
2
s
Watts
Watt
Amps
Volts
°C
°C
In. lb.
°C/W
Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices
should not be tested with a constant current source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage.
Note 2: Isolated stud devices must be derated an additional 10 percent.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Peak forward or reverse blocking current
(Rated V
DRM
or V
RRM
, gate open, T
J
= 100°C)
2N3870, 2N3896, 2N6171
2N3871, 2N3897, 2N6172
2N3872, 2N3898, 2N6173
2N3873, 2N3899, 2N6174
Rated V
DRM
or V
RRM
, gate open, T
J
= 25°C)
All devices
Symbol
Min.
Typ.
Max.
Unit
I
DRM
, I
RRM
-
-
-
-
-
1
1
1
1
-
2.0
2.5
3.0
4.0
10
mA
µA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130116
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