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2SC3854

Description
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size310KB,3 Pages
ManufacturerAllegro
Websitehttp://www.allegromicro.com/
Download Datasheet Parametric View All

2SC3854 Overview

Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P, 3 PIN

2SC3854 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)8 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment80 W
Maximum power dissipation(Abs)80 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
VCEsat-Max1.5 V
Base Number Matches1
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