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CY7C1465AV33-133BGI

Description
1M X 36 ZBT SRAM, 6.5 ns, PQFP100
Categorystorage   
File Size588KB,32 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

CY7C1465AV33-133BGI Overview

1M X 36 ZBT SRAM, 6.5 ns, PQFP100

CY7C1465AV33-133BGI Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals100
Maximum operating temperature70 Cel
Minimum operating temperature0.0 Cel
Maximum supply/operating voltage3.6 V
Minimum supply/operating voltage3.14 V
Rated supply voltage3.3 V
maximum access time6.5 ns
Processing package description14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, MS-026, TQFP-100
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLATPACK, LOW PROFILE
surface mountYes
Terminal formGULL WING
Terminal spacing0.6500 mm
terminal coatingMATTE TIN
Terminal locationQUAD
Packaging MaterialsPLASTIC/EPOXY
Temperature levelCOMMERCIAL
memory width36
organize1M X 36
storage density3.77E7 deg
operating modeSYNCHRONOUS
Number of digits1.05E6 words
Number of digits1M
Memory IC typeZBT SRAM
serial parallelPARALLEL
CY7C1461AV33
CY7C1463AV33, CY7C1465AV33
36 Mbit (1M x 36/2 M x 18/512K x 72)
Flow-Through SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33
[1]
are
3.3V, 1M x 36/2M x 18/512K x 72 Synchronous Flow-Through
Burst SRAMs designed specifically to support unlimited true
back-to-back read and write operations without the insertion of
wait states. The CY7C1461AV33/CY7C1463AV33/CY7C1465AV33 is
equipped with the advanced NoBL logic required to enable
consecutive read and write operations with data being trans-
ferred on every clock cycle. This feature dramatically improves
the throughput of data through the SRAM, especially in systems
that require frequent write-read transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
Clock Enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133 MHz device).
Write operations are controlled by the two or four Byte Write
Select (BW
X
) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self timed write circuitry.
Three synchronous Chip Enables (CE
1
, CE
2
, CE
3
) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
No Bus Latency™ (NoBL™) architecture eliminates dead
cycles between write and read cycles
Supports up to 133 MHz bus operations with zero wait states
Data is transferred on every clock
Pin compatible and functionally equivalent to ZBT™ devices
Internally self timed output buffer control to eliminate the need
to use OE
Registered inputs for flow through operation
Byte write capability
3.3V and 2.5V IO power supply
Fast clock-to-output times
6.5 ns (for 133 MHz device)
Clock Enable (CEN) pin to enable clock and suspend operation
Synchronous self timed writes
Asynchronous Output Enable
CY7C1461AV33, CY7C1463AV33 available in
JEDEC-standard Pb-free 100-pin TQFP package, Pb-free and
non Pb-free 165-Ball FBGA package. CY7C1465AV33
available in Pb-free and non-Pb-free 209-Ball FBGA package
Three chip enables for simple depth expansion
Automatic power down feature available using ZZ mode or CE
deselect
IEEE 1149.1 JTAG-compatible boundary scan
Burst capability — linear or interleaved burst order
Low standby power
Selection Guide
133 MHz
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
6.5
310
120
100 MHz
8.5
290
120
Unit
ns
mA
mA
Note
1. For best practices recommendations, refer to the Cypress application note
System Design Guidelines
on
www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05356 Rev. *G
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised May 05, 2008
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