SDF120JABEHSN datasheet, PDF - EEWORLD Datasheet

SDF120JABEHSN: DescriptionPower Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size153KB，1 Pages; ManufacturerSolitron Devices Inc.

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SDF120JABEHSN Overview

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Solitron Devices Inc.
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	9.2 A
Maximum drain current (ID)	9.2 A
Maximum drain-source on-resistance	0.27 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	37 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Maximum off time (toff)	71 ns
Maximum opening time (tons)	77 ns
Base Number Matches	1

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