INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
D44Q1/3/5
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 125V(Min)- D44Q1
= 175V(Min)- D44Q3
= 225V(Min)- D44Q5
·High
Switching Speed
·Low
Saturation Voltage
APPLICATIONS
·Designed
for linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
D44Q1
V
CBO
Collector-Base Voltage
D44Q3
D44Q5
D44Q1
V
CEO
Collector-Emitter Voltage
D44Q3
D44Q5
V
EBO
I
C
P
C
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Collector Power Dissipation
@ T
a
=25℃
Junction Temperature
Storage Temperature Range
VALUE
200
250
300
125
175
225
7
4
31.25
W
1.67
150
-65~150
℃
℃
V
A
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-a
PARAMETER
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
MAX
4
75
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
D44Q1
V
CEO(SUS)
Collector-Emitter
Sustaining Voltage
D44Q3
D44Q5
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
D44Q1
I
CBO
Collector
Cutoff Current
D44Q3
D44Q5
h
FE-1
h
FE-2
f
T
C
OB
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
I
C
= 2A; I
B
= 0.2A
B
D44Q1/3/5
CONDITIONS
MIN
125
TYP.
MAX
UNIT
I
C
= 10mA ;I
B
= 0
B
175
225
1.0
1.3
10
10
10
30
20
20
32
V
V
V
I
C
= 2A; I
B
= 0.2A
B
V
CB
= 200V;I
E
= 0
V
CB
= 250V;I
E
= 0
V
CB
= 300V;I
E
= 0
I
C
= 0.2A ; V
CE
= 10V
I
C
= 2A ; V
CE
= 10V
I
C
= 0.1A; V
CE
= 10V
I
E
= 0; V
CB
= 10V; f= 1MHz
μA
MHz
pF
Switching Times
t
on
t
stg
t
f
Delay Time
Storage Time
Fall Time
V
CC
= 50V
I
C
= 1A; I
B1
= -I
B2
= 0.1A
5
0.4
2.0
1.7
μs
μs
μs
isc Website：www.iscsemi.cn
2
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