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MC803128K32L-6R6I

Description
SRAM
Categorystorage    storage   
File Size189KB,10 Pages
ManufacturerMonolithic System Technology Inc
Download Datasheet Parametric Compare View All

MC803128K32L-6R6I Overview

SRAM

MC803128K32L-6R6I Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
MC803128K32
M
O
S
YS
128Kx32 Pipeline Burst SRAM
®
High performance, low power pipeline burst SRAM
Ultra low power for green PC and battery
powered PC
High performance
Ÿ
100-150MHz Speed grades
Ÿ
3-1-1-1 Burst Read
Ÿ
1-1-1-1 Burst Write
Ÿ
3-1-1-1-1-1-1-1... pipeline operation
Low power
Ÿ
Low active power
Ÿ
Ultra low power ZZ standby mode
Ÿ
Single 3.3V supply (V
DD
)
Ÿ
Isolated 3.3V or 2.5V I/O supply (V
DDQ
)
Compatibility
Ÿ
Individual Byte Write and Global Write mask-
ing
Ÿ
Interleave and burst address support
Ÿ
Industry standard 100-Pin PBSRAM pinout
Ÿ
Industry standard PBSRAM specification
Applications
®
Ÿ
Pentium and PowerPC pipelined L2 Cache
Ÿ
Ideal for high speed, low power communica-
tions buffers
Ÿ
Power sensitive portable DSP applications
______________________________________________
A6
A7
CE1#
CE2
BW4#
BW3#
BW2#
BW1#
CE3#
VDD
VSS
CLK
GW#
BWE#
OE#
ADSC#
ADSP#
ADV#
A8
A9
NC, (DQP3)
DQ17
DQ18
VDDQ
VSSQ
DQ19
DQ20
DQ21
DQ22
VSSQ
VDDQ
DQ23
DQ24
NC
VDD
NC
VSS
DQ25
DQ26
VDDQ
VSSQ
DQ27
DQ28
DQ29
DQ30
VSSQ
VDDQ
DQ31
DQ32
NC, (DQP4)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
Ÿ
100 Pin QFP
20 mm x 14 mm body
0.65 mm nominal pin pitch
LBO#
A5
A4
A3
A2
A1
A0
NC
NC
VSS
VDD
NC
NC
A10
A11
A12
A13
A14
A15
A16
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
NC, (DQP2)
DQ16
DQ15
VDDQ
VSSQ
DQ14
DQ13
DQ12
DQ11
VSSQ
VDDQ
DQ10
DQ9
VSS
NC
VDD
ZZ
DQ8
DQ7
VDDQ
VSSQ
DQ6
DQ5
DQ4
DQ3
VSSQ
VDDQ
DQ2
DQ1
NC, (DQP1)
VIS128KZ
Figure 1. Pin Function
Overview
The MoSys MC803128K32 is a high performance,
low power pipeline-burst-SRAM (PBSRAM). Fabri-
cated using an advanced low power, high perform-
ance CMOS process, the MoSys MC803128K32 is
backward pin and function compatible with stan-
dard 32Kx32 and 64Kx32 PBSRAMs with additional
operating features like low power ZZ standby
mode and linear burst order addressing. These ad-
ditional operating features are defined so that, with
proper implementation, PC boards can work trans-
parently with 32Kx32, 64Kx32, or 128Kx32 configu-
rations, allowing the designer maximum configura-
tion flexibility within a single footprint layout.
The MoSys MC803128K32 supports PBSRAM op-
erating modes at maximum burst frequency in-
cluding indefinite pipeline read or write (3-1-1-1-1-1-
1...)
Parameter
Cycle Time
Access Time
Clock to High-Z
Symbol
tKC
tKQ
tKQHZ
-10
10
5.5
5
-7R5
7.5
4.5
4
-6R6
6.6
4
3.5
Unit
ns
ns
ns
The MC803128K32 is packaged in a standard 100
lead LQFP.
Lowest Power
The MC803128K32 PBSRAMs afford systems
dramatic power savings due to the benefits of their
proprietary MoSys technology. Peak operating
power of a typical PBSRAM is 5x that of the
MC803128K32. Making it ideal for portable applica-
tions, as well as applications requiring a large
amount of RAM.
Part Number Designation
Example:
MC803128K32L-10 I
Device Designation:
MC8:,
Series:
03
Organization:
128K32
Package Type:
L=LQFP
100MHz
Speed: –
10
7R5
133MHz
6R6
150MHz
Temp:
I
= Industrial Temperature, optional
DS09, Rev 1.9 – 07/22/99
© 1999 MoSys Inc., All Rights Reserved, 1020 Stewart Drive, Sunnyvale, CA 94086
Page 1

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Reach Compliance Code unknown unknown unknown unknown unknown
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