GP801DDS18 datasheet, PDF - EEWORLD Datasheet

GP801DDS18: DescriptionInsulated Gate Bipolar Transistor, 800A I(C), 1800V V(BR)CES, N-Channel; CategoryDiscrete semiconductor The transistor; File Size142KB，10 Pages; ManufacturerDynex; Websitehttp://www.dynexsemi.com/

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GP801DDS18 Overview

Insulated Gate Bipolar Transistor, 800A I(C), 1800V V(BR)CES, N-Channel

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-XUFM-X12
Reach Compliance Code	unknown
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Maximum collector current (IC)	800 A
Collector-emitter maximum voltage	1800 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code	R-XUFM-X12
Number of components	2
Number of terminals	12
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	1500 ns
Nominal on time (ton)	650 ns
Base Number Matches	1

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