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SDT55905

Description
Power Bipolar Transistor, 75A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-68, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size272KB,5 Pages
ManufacturerSolitron Devices Inc.
Download Datasheet Parametric View All

SDT55905 Overview

Power Bipolar Transistor, 75A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, TO-68, 3 PIN

SDT55905 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeTO-68
package instructionTO-68, 3 PIN
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)75 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeO-MBPM-P3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment525 W
Maximum power dissipation(Abs)525 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
VCEsat-Max1.4 V
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