KIA
SEMICONDUCTORS
10A，400V
N-CHANNEL MOSFET
6140A
4.
Ordering Information
Part Number
KNP6140A
KNF6140A
Package
TO-220
TO-220F
Brand
KIA
KIA
5.
Absolute maximum ratings
(T
C
= 25
ºC
, unless otherwise specified)
Parameter
KNP6140A KNF6140A
Unit
Drain-to-Source Voltage
[1]
400
V
Gate-to-Source Voltage
±30
Continuous Drain Current
10
10*
I
D
Continuous Drain Current@ Tc=100
ºC
Figure3
A
I
DM
Pulsed Drain Current at V
GS
=10V
[2]
Figure6
E
AS
Single Pulse Avalanche Energy
650
mJ
dv /dt
Peak Diode Recovery dv/dt
[3]
5.0
V/ns
Power Dissipation
140
45
W
P
D
Derating Factor above 25
ºC
1.12
0.37
W/
ºC
Maximum Temperature for Soldering
T
L
300
Leads at 0.063in (1.6mm) from Case for 10
T
PAK
260
ºC
seconds, Package Body for 10 seconds
T
J
&T
STG
Operating and Storage Temperature Range
-55 to 150
*Drain current limited by maximum junction temperature
Caution: Stresses greater than those listed in the
“Absolute
Maximum Ratings” may cause permanent
damage to the device.
Symbol
V
DSS
V
GSS
6.
Thermal characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
KNP6140A
0.89
62
KNF6140A
2.7
100
Unit
ºC
/W
2 of 8
Rev 1.0 Aug 2017
KIA
SEMICONDUCTORS
10A，400V
N-CHANNEL MOSFET
6140A
(TJ=25°C,unless otherwise specified)
7.
Electrical characteristics
OFF Characteristics
Symbol
BV
DSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Drain-to-Source Leakage Current
Test Conditions
V
GS
=0V, I
D
=250uA
V
DS
=400V, V
GS
=0V
V
DS
=320V,V
GS
=0V,
T
J
=125°C
V
GS
=+30V,V
DS
=0V
V
GS
=-30V, V
DS
=0V
Test Conditions
V
GS
=10V, I
D
=5A
V
DS
=V
GS
,I
D
=250uA
V
DS
=20V,I
D
=10A
Test Conditions
V
GS
=0V,
V
DS
=25V,
f=1.0MHZ
V
DD
=200V,
I
D
=10A,
V
GS
=0 to 10V
Min.
400
--
--
--
--
Min.
--
2.0
--
Min.
--
--
--
--
--
--
Min.
--
--
--
--
Min
--
--
--
--
--
Typ.
--
--
--
--
--
Typ.
0.35
--
12
Typ.
1254
21
150
28
7.0
11
Typ.
14
25
44
28
Typ.
--
--
--
303
1.8
Max.
--
1
100
+100
-100
Max.
0.5
4.0
--
Max.
--
--
--
--
--
--
Max.
--
--
--
--
Max.
10
40
1.5
--
--
Unit
A
V
ns
uC
nS
Unit
nC
pF
uA
Unit
V
I
GSS
Gate-to-Source Leakage Current
nA
ON Characteristics
Symbol
R
DS(ON)
V
GS(TH)
g
FS
Symbol
C
iss
C
rss
C
oss
Q
g
Q
gs
Q
gd
Symbol
t
d(ON)
t
rise
t
d(OFF)
t
fall
Symbol
I
SD
I
SM
V
SD
t
rr
Parameter
Static Drain-to-Source On-Resistance
[4]
Gate Threshold Voltage
Forward Transconductance
[4]
Parameter
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Parameter
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Parameter
Continuous Source Current
[4]
Pulsed Source Current
[4]
Diode Forward Voltage
Reverse recovery time
(TJ=25°C,unless otherwise specified)
Unit
Ω
V
S
Unit
Dynamic Characteristics
Essentially independent of operating temperature
Resistive Switching Characteristics
Essentially independent of operating temperature
Test Conditions
V
DD
=200V,
I
D
=10A,
V
GS
= 10V
R
G
=12Ω
Source-Drain Body Diode Characteristics
(T
J
=25°C,unless otherwise specified)
Test Conditions
Integral PN-diode in
MOSFET
I
S
=10A, V
GS
=0V
V
GS
=0V ,I
F
=10A,
diF/dt=100A/μs
Q
rr
Reverse recovery charge
Note:
1.T
J
=+25°C to +150°C
2.
Repetitive rating; pulse width limited by maximum junction temperature.
3.I
SD
=10A di/dt<100A/μs,V
DD
<B
VDSS
,T
J
=+150°C.
4.Pulse width≤380μs; duty cycle≤2%.
3 of 8
Rev 1.0 Aug 2017
Circuit Observation Room
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