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MC5618

Description
0.57 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size259KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MC5618 Overview

0.57 A, SILICON, SIGNAL DIODE

MC5618 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current0.3 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage4500 V
Maximum reverse recovery time0.3 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
MC5610 thru MC5619
Available
FAST RECOVERY, HIGH POWER, MICRO
HIGH VOLTAGE RECTIFIERS
DESCRIPTION
The MC5610 through MC5619 series of fast recovery high voltage silicon rectifiers feature the
smallest packages available. They are ideal for high-reliability where a failure cannot be
tolerated. These 0.275 to 0.790 amp rated rectifiers for working peak reverse voltages from
1500 to 5000 volts are hermetically sealed with void-less glass construction. Typical
applications include transmitters, power supplies, radar equipment and X-ray machines.
Surface mount MELF package configurations are also available by adding “US” suffix.
Microsemi also offers numerous other rectifier products to meet higher and lower current
ratings with various recovery time speed requirements including fast and ultrafast device types
in both through-hole and surface mount packages.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Void-less hermetically sealed glass package.
Triple-layer passivation.
Lowest reverse leakage available.
Absolute high voltage / high temperature stability.
RoHS compliant versions available.
S Package
APPLICATIONS / BENEFITS
High voltage standard recovery rectifiers 1500 to 5,000 volts.
Military and other high-reliability applications.
Applications include bridges, half-bridges, catch diodes, voltage multipliers, X-ray machines, power
supplies, transmitters, and radar equipment.
High forward surge current capability.
Extremely robust construction.
Inherently radiation hard as described in Microsemi
MicroNote 050.
MAXIMUM RATINGS
@ T
A
= 25
o
C unless otherwise specified
Parameters/Test Conditions
Junction Temperature
MC5610 – MC5612
MC5613 – MC5616
MC5617 – MC5619
Symbol
T
J
Value
-55 to +150
-65 to +150
-65 to +125
-65 to +175
38
1500
2000
2500
3000
4000
4500
5000
260
o
Unit
o
C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Storage Temperature
Thermal Resistance Junction-to-Lead @ 3/8 inch
(10 mm) lead length from body
Working Peak Reverse Voltage:
MC5610 & MC5613
MC5611 & MC5614
MC5612 & MC5615
MC5616
MC5617
MC5618
MC5619
T
STG
R
ӨJL
o
C
C/W
V
RWM
V
Solder Temperature @ 10 s
T
SP
o
C
T4-LDS-0267, Rev. 1 (120963)
©2012 Microsemi Corporation
Page 1 of 4

MC5618 Related Products

MC5618 MC5610_04 MC5619 MC5616 MC5615 MC5614
Description 0.57 A, SILICON, SIGNAL DIODE 0.57 A, SILICON, SIGNAL DIODE 0.57 A, SILICON, SIGNAL DIODE 0.57 A, SILICON, SIGNAL DIODE 0.57 A, SILICON, SIGNAL DIODE 0.57 A, SILICON, SIGNAL DIODE
package instruction O-LALF-W2 - HERMETIC SEALED, GLASS, S PACKAGE-2 HERMETIC SEALED, GLASS, S PACKAGE-2 HERMETIC SEALED, GLASS, S PACKAGE-2 HERMETIC SEALED, GLASS, S PACKAGE-2
Contacts 2 - - 2 2 2
Reach Compliance Code compliant - compli _compli compli compli
ECCN code EAR99 - EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY - HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON - SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-LALF-W2 - O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Number of components 1 - 1 1 1 1
Number of terminals 2 - 2 2 2 2
Maximum operating temperature 125 °C - 125 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C - -65 °C -65 °C -65 °C -65 °C
Maximum output current 0.3 A - 0.275 A 0.57 A 0.665 A 0.79 A
Package body material GLASS - GLASS GLASS GLASS GLASS
Package shape ROUND - ROUND ROUND ROUND ROUND
Package form LONG FORM - LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 4500 V - 5000 V 3000 V 2500 V 2000 V
Maximum reverse recovery time 0.3 µs - 0.3 µs 0.3 µs 0.3 µs 0.3 µs
surface mount NO - NO NO NO NO
Terminal form WIRE - WIRE WIRE WIRE WIRE
Terminal location AXIAL - AXIAL AXIAL AXIAL AXIAL
Base Number Matches 1 - 1 1 1 -
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