MC5619 datasheet, PDF - EEWORLD Datasheet

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MC5619: Description0.57 A, SILICON, SIGNAL DIODE; CategoryDiscrete semiconductor diode; File Size259KB，4 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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MC5619 Overview

0.57 A, SILICON, SIGNAL DIODE

MC5619 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	HERMETIC SEALED, GLASS, S PACKAGE-2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	HIGH RELIABILITY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LALF-W2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-65 °C
Maximum output current	0.275 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	5000 V
Maximum reverse recovery time	0.3 µs
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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MC5610 thru MC5619

Available

FAST RECOVERY, HIGH POWER, MICRO

HIGH VOLTAGE RECTIFIERS

DESCRIPTION

The MC5610 through MC5619 series of fast recovery high voltage silicon rectifiers feature the

smallest packages available. They are ideal for high-reliability where a failure cannot be

tolerated. These 0.275 to 0.790 amp rated rectifiers for working peak reverse voltages from

1500 to 5000 volts are hermetically sealed with void-less glass construction. Typical

applications include transmitters, power supplies, radar equipment and X-ray machines.

Surface mount MELF package configurations are also available by adding “US” suffix.

Microsemi also offers numerous other rectifier products to meet higher and lower current

ratings with various recovery time speed requirements including fast and ultrafast device types

in both through-hole and surface mount packages.

Important:

For the latest information, visit our website

http://www.microsemi.com.

FEATURES

•

Void-less hermetically sealed glass package.

Triple-layer passivation.

Lowest reverse leakage available.

Absolute high voltage / high temperature stability.

RoHS compliant versions available.

S Package

APPLICATIONS / BENEFITS

•

High voltage standard recovery rectifiers 1500 to 5,000 volts.

Military and other high-reliability applications.

Applications include bridges, half-bridges, catch diodes, voltage multipliers, X-ray machines, power

supplies, transmitters, and radar equipment.

High forward surge current capability.

Extremely robust construction.

Inherently radiation hard as described in Microsemi

MicroNote 050.

MAXIMUM RATINGS

@ T

= 25

C unless otherwise specified

Parameters/Test Conditions

Junction Temperature

MC5610 – MC5612

MC5613 – MC5616

MC5617 – MC5619

Symbol

Value

-55 to +150

-65 to +150

-65 to +125

-65 to +175

1500

2000

2500

3000

4000

4500

5000

260

Unit

MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841

Tel: 1-800-446-1158 or

(978) 620-2600

Fax: (978) 689-0803

MSC – Ireland

Gort Road Business Park,

Ennis, Co. Clare, Ireland

Tel: +353 (0) 65 6840044

Fax: +353 (0) 65 6822298

Website:

www.microsemi.com

Storage Temperature

Thermal Resistance Junction-to-Lead @ 3/8 inch

(10 mm) lead length from body

Working Peak Reverse Voltage:

MC5610 & MC5613

MC5611 & MC5614

MC5612 & MC5615

MC5616

MC5617

MC5618

MC5619

STG

ӨJL

C/W

RWM

Solder Temperature @ 10 s

T4-LDS-0267, Rev. 1 (120963)

Page 1 of 4

MC5619 Related Products

	MC5619	MC5610_04	MC5618	MC5616	MC5615	MC5614
Description	0.57 A, SILICON, SIGNAL DIODE	0.57 A, SILICON, SIGNAL DIODE	0.57 A, SILICON, SIGNAL DIODE	0.57 A, SILICON, SIGNAL DIODE	0.57 A, SILICON, SIGNAL DIODE	0.57 A, SILICON, SIGNAL DIODE
package instruction	HERMETIC SEALED, GLASS, S PACKAGE-2	-	O-LALF-W2	HERMETIC SEALED, GLASS, S PACKAGE-2	HERMETIC SEALED, GLASS, S PACKAGE-2	HERMETIC SEALED, GLASS, S PACKAGE-2
Reach Compliance Code	compli	-	compliant	_compli	compli	compli
ECCN code	EAR99	-	EAR99	EAR99	EAR99	EAR99
Other features	HIGH RELIABILITY	-	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
Shell connection	ISOLATED	-	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	-	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LALF-W2	-	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	-	1	1	1	1
Number of terminals	2	-	2	2	2	2
Maximum operating temperature	125 °C	-	125 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	0.275 A	-	0.3 A	0.57 A	0.665 A	0.79 A
Package body material	GLASS	-	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	-	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	5000 V	-	4500 V	3000 V	2500 V	2000 V
Maximum reverse recovery time	0.3 µs	-	0.3 µs	0.3 µs	0.3 µs	0.3 µs
surface mount	NO	-	NO	NO	NO	NO
Terminal form	WIRE	-	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	-	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	-	1	1	1	-
Contacts	-	-	2	2	2	2

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