NAND512R3B3BV6T datasheet, PDF

NAND512R3B3BV6T: Description64MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48; Categorystorage storage; File Size999KB，59 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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NAND512R3B3BV6T Overview

64MX8 FLASH 1.8V PROM, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	STMicroelectronics
Parts packaging code	SOIC
package instruction	12 X 17 MM, 0.65 MM HEIGHT, PLASTIC, USOP-48
Contacts	48
Reach Compliance Code	compliant
ECCN code	3A991.B.1.A
Is Samacsys	N
Maximum access time	35 ns
JESD-30 code	R-PDSO-G48
JESD-609 code	e0
length	15.4 mm
memory density	536870912 bit
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of terminals	48
word count	67108864 words
character code	64000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64MX8
Package body material	PLASTIC/EPOXY
encapsulated code	VSSOP
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	1.8 V
Certification status	Not Qualified
Maximum seat height	0.65 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
type	NAND TYPE
width	12 mm
Base Number Matches	1

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