2N6308 datasheet, PDF - EEWORLD Datasheet

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2N6308: DescriptionPower Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,; CategoryDiscrete semiconductor The transistor; File Size54KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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2N6308 Overview

Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,

2N6308 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Objectid	1689289830
Parts packaging code	TO-3
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	350 V
Configuration	SINGLE
Minimum DC current gain (hFE)	12
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	125 W
Certification status	Not Qualified
Guideline	MIL-19500/498
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	5 MHz

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TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/498

Devices

2N6306

2N6308

Qualified Level

JAN

JANTX

JANTXV

MAXIMUM RATINGS

Ratings

2N6306 2N6308

Collector-Emitter Voltage

250

350

CEO

Collector-Base Voltage

500

700

CBO

Emitter-Base Voltage

8.0

EBO

Collector Current

8.0

Base Current

4.0

0 (1)

Total Power Dissipation

@ T

= +25 C

125

0 (1)

@ T

= +100 C

62.5

Operating & Storage Temperature Range

-65 to +200

op,

stg

1) Between T

= +25 C and T

= +175 C, linear derating factor average = 0.833 W/

Symbol

Units

Vdc

Adc

TO-3 (TO-204AA)*

*See Appendix A for Package

Outline

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min.

Max.

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

= 100 mAdc

Collector-Emitter Cutoff Current

= 500 Vdc; V

= 1.5 Vdc

= 700 Vdc; V

= 1.5 Vdc

Collector-Emitter Cutoff Current

= 250 Vdc

= 350 Vdc

Emitter-Base Cutoff Current

= 8 Vdc

2N6306

2N6308

2N6306

2N6308

2N6306

2N6308

(BR)

CEO

250

350

5.0

Vdc

CEX

µAdc

CEO

EBO

µAdc

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

Page 1 of 2

2N6308 Related Products

	2N6308	JANTXV2N6308
Description	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin,	Power Bipolar Transistor, 8A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, TO-3, 2 PIN
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Objectid	1689289830	1927730245
Parts packaging code	TO-3	TO-3
Contacts	2	2
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	8 A	8 A
Collector-emitter maximum voltage	350 V	350 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	12	3
JEDEC-95 code	TO-3	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	2	2
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Qualified
Guideline	MIL-19500/498	MIL-19500/498D
surface mount	NO	NO
Terminal surface	TIN LEAD	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON

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