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NTMFS4836N

Description
16 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size130KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTMFS4836N Overview

16 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET

NTMFS4836N Parametric

Parameter NameAttribute value
Number of terminals5
Minimum breakdown voltage30 V
Processing package description6 × 5 MM, 铅 FREE, CASE 488AA-01, DFN5, SO-8FL, 6 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formFLAT
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current16 A
Rated avalanche energy612 mJ
Maximum drain on-resistance0.0030 ohm
Maximum leakage current pulse288 A
NTMFS4837N
Power MOSFET
Features
30 V, 74 A, Single N−Channel, SO−8FL
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
Refer to Application Note AND8195/D
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
P
D
I
DM
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
30
±20
16
11.5
2.2
10
7
0.88
74
53
47.2
148
−55
to
+150
39
6
242
W
A
°C
A
V/ns
mJ
W
A
1
http://onsemi.com
Applications
V
(BR)DSS
30 V
R
DS(ON)
MAX
5.0 mW @ 10 V
7.5 mW @ 4.5 V
I
D
MAX
74 A
D (5,6)
Unit
V
V
A
S (1,2,3)
W
A
N−CHANNEL MOSFET
G (4)
MARKING
DIAGRAM
D
S
S
S
G
4837N
AYWZZ
D
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
I
L
= 22 A
pk
, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4837NT1G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
1500 /
Tape & Reel
5000 /
Tape & Reel
T
L
260
°C
NTMFS4837NT3G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
Rev. 6
1
Publication Order Number:
NTMFS4837N/D

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Description 16 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 16 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 16 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 16 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET 16 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET
Number of terminals 5 12 5 5 5
surface mount Yes YES YES Yes YES
Terminal form FLAT NO LEAD GULL WING FLAT NO LEAD
Terminal location pair DUAL SINGLE pair DUAL
Shell connection DRAIN - - DRAIN DRAIN
Number of components 1 - - 1 1
transistor applications switch - - switch SWITCHING
Transistor component materials silicon - - silicon SILICON
Is it Rohs certified? - conform to conform to - incompatible
Maker - ON Semiconductor ON Semiconductor - ON Semiconductor
Parts packaging code - LCC D2PAK - SOT
package instruction - 9 X 9 MM, LEAD FREE, PLLP-12 LEAD FREE, D2PAK-5 - CASE 488AA-01, SO-8
Contacts - 12 5 - 8
Reach Compliance Code - _compli _compli - compliant
ECCN code - EAR99 EAR99 - EAR99
JESD-30 code - S-XDSO-N12 R-PSSO-G5 - R-PDSO-N5
JESD-609 code - e3 e3 - e0
Package body material - UNSPECIFIED PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape - SQUARE RECTANGULAR - RECTANGULAR
Package form - SMALL OUTLINE, HEAT SINK/SLUG SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260 - 240
Certification status - Not Qualified Not Qualified - Not Qualified
Terminal surface - Tin (Sn) Tin (Sn) - TIN LEAD
Maximum time at peak reflow temperature - 40 40 - 30
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