NTMFS4837N
Power MOSFET
Features
30 V, 74 A, Single N−Channel, SO−8FL
•
•
•
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
Refer to Application Note AND8195/D
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
Steady
State
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
P
D
I
DM
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
30
±20
16
11.5
2.2
10
7
0.88
74
53
47.2
148
−55
to
+150
39
6
242
W
A
°C
A
V/ns
mJ
W
A
1
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Applications
V
(BR)DSS
30 V
R
DS(ON)
MAX
5.0 mW @ 10 V
7.5 mW @ 4.5 V
I
D
MAX
74 A
D (5,6)
Unit
V
V
A
S (1,2,3)
W
A
N−CHANNEL MOSFET
G (4)
MARKING
DIAGRAM
D
S
S
S
G
4837N
AYWZZ
D
D
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 30 V, V
GS
= 10 V,
I
L
= 22 A
pk
, L = 1.0 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
NTMFS4837NT1G
Package
SO−8FL
(Pb−Free)
SO−8FL
(Pb−Free)
Shipping
†
1500 /
Tape & Reel
5000 /
Tape & Reel
T
L
260
°C
NTMFS4837NT3G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
−
Rev. 6
1
Publication Order Number:
NTMFS4837N/D
NTMFS4837N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJA
R
qJA
Value
2.65
56.75
142.2
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V to
11.5 V
V
GS
= 4.5 V
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 15 A,
R
G
= 3.0
W
14.2
55
19
10
8.5
25.6
25.2
9.2
ns
ns
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 15 A
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
2048
444
239
14.2
2.98
5.7
6.7
34.2
nC
22
nC
pF
g
FS
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 15 V, I
D
= 15 A
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25
°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.5
5.7
3.5
3.5
5.9
5.9
15
2.5
V
mV/°C
5.0
mW
7.5
S
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS4837N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.85
0.72
24
13
11
14
nC
ns
1.2
V
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance
Drain Inductance
Gate Inductance
Gate Resistance
0.93
0.005
1.84
2.8
nH
W
3. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
4. Switching characteristics are independent of operating junction temperatures.
100
90
I
D
, DRAIN CURRENT (A)
80
70
60
50
40
30
20
10
0
0
1
2
3
4
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
3.6 V
3.4 V
3.2 V
5
V
GS =
10 V to 4.5 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
4V
3.8 V
100
90
80
70
60
50
40
30
20
10
0
1
V
DS
≥
10 V
T
J
=
−55°C
T
J
= 25°C
T
J
= 125°C
2
3
4
5
6
7
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
8
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.016
0.015
0.014
0.013
0.012
0.011
0.010
0.009
0.008
0.007
0.006
0.005
0.004
0.003
3.0
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.01
Figure 2. Transfer Characteristics
T = 25°C
I
D
= 30 A
0.009
0.008
0.007
0.006
0.004
0.002
0
0.005
0.003
T
J
= 25°C
V
GS
= 4.5 V
V
GS
= 11.5 V
0.001
10
20
40
60
30
50
70
I
D
, DRAIN CURRENT (A)
80
90
4.0
5.0
6.0
7.0
8.0
9.0
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
11 11.5
Figure 3. On−Resistance vs. V
GS
Figure 4. On−Resistance vs. Drain Current &
Gate Voltage
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3
NTMFS4837N
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.80
1.60
1.40
1.20
1.00
0.80
0.60
−50
I
D
= 30 A
V
GS
= 10 V & 4.5 V
100000
10000
I
DSS
, LEAKAGE (nA)
1000
100
10
1
0
T
J
= 125°C
V
GS
= 0 V
T
J
= 150°C
T
J
= 25°C
5
10
15
20
25
30
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
3000
12
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current vs.
Voltage
T
J
= 25°C
C
ISS
Q
T
10
8
6
Q
gd
4
2
0
Q
gs
V
DD
= 15.0 V
V
GS
= 11.5 V
I
D
= 30 A
T
J
= 25°C
5
10
15
20
25
30
35
C, CAPACITANCE (pF)
2000
1000
C
OSS
C
RSS
0
10
5
0
5
10
15
20
25
0
V
GS
V
DS
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
G
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
Figure 8. Gate−to−Source & Drain−to−Source
Voltage vs. Total Charge
30
25
20
15
10
5
0
0.50
V
GS
= 0 V
T
J
= 25°C
t, TIME (ns)
100
t
d(off)
t
r
10
t
f
t
d(on)
1
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
1
10
R
G
, GATE RESISTANCE (W)
100
0.60
0.80
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation vs.
Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTMFS4837N
V
GS
= 20 V
Single Pulse
T
C
= 25°C
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
250
225
200
175
150
125
100
75
50
25
0
25
I
D
= 22 A
I
D
, DRAIN CURRENT (A)
100
10
ms
10
R
DS(on)
Limit
Thermal Limit
Package Limit
1
0.1
dc
1
100
ms
10 ms
100 ms
100
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward−Biased
Safe Operating Range
100
Figure 12. Maximum Avalanche Energy vs,
Starting Junction Temperature
25°C
100°C
125°C
I
D
(A)
10
1
1
100
PULSE WIDTH (ms)
10
1000
Figure 13. EAS vs. Pulse Width
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