ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Description
The ACE1512E uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. They
offer operation over a wide gate drive range from 1.8V to 8V.
It is ESD protected.
Features
•
•
•
•
•
•
V
DS
(V)=20V
I
D
=6.5A (V
GS
=4.5V)
R
DS(ON)
<21mΩ (V
GS
=4.5V)
R
DS(ON)
<25mΩ (V
GS
=2.5V)
R
DS(ON)
<33mΩ (V
GS
=1.8V)
ESD Protected : 2000V
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)*AC
Drain Current (Pulsed)*B
Power Dissipation
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol Ratings Unit
V
DSS
V
GSS
I
D
I
DM
P
D
20
±8
6.5
5.2
24
1
0.64
V
V
A
A
W
Operating temperature / storage temperature
T
J
/T
STG
-55~150
℃
Packaging Type
TSOT-23-3
VER 1.1
1
ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Ordering information
ACE1512EBMS + H
Halogen - free
Pb - free
BMS : TSOT-23-3
Electrical Characteristics
T
A
=25℃,
unless otherwise
specified.
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Forward transconductance
Diode forward voltage
Maximum body-diode continuous current
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Note :
Symbol
Static
V
(BR)DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
g
FS
V
SD
I
S
Switching
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Dynamic
C
iss
C
oss
C
rss
Test Conditions
V
GS
=0V, I
D
=250µA
V
DS
=20V, V
GS
=0V
V
GS
=V
DS
, I
DS
=250µA
V
GS
=±8V, V
DS
=0V
V
GS
=4.5V, I
D
=6.5A
V
GS
=2.5V, I
D
=5.5A
V
GS
=1.8V, I
D
=5A
V
DS
=5V, I
D
=6.5A
I
SD
=2.5A, V
GS
=0V
Min
20
Typ
Max
Unit
V
1
0.4
0.52
16.2
19.4
24.4
13
0.67
1.6
2.5
13.8
17.94
5.33
7.28
12.4
25.4
103.4
32
1
10
21
25
33
µA
V
µA
mΩ
S
V
A
V
GS
=4.5V, V
DS
=10V, I
D
=8A
4.1
5.6
6.2
nC
V
GS
=5V, V
DS
=10V
R
L
=1.5Ω, R
GEN
=3Ω
12.7
51.7
16
1160
ns
V
GS
=0V, V
DS
=10V, f=1MHz
104
29
pF
A: The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with
TA=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
VER 1.1
2
ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Typical Performance Characteristics
V
DS
(Volts)
On-Region Characteristics
V
GS
(Volts)
Transfer Characteristics
I
D
(A)
On-Resistance vs. Drain Current and Gate
Gate Voltage
Temperature (
O
C)
On-Resistance vs. Junction Temperature
V
GS
(Volts)
On-Resistance vs. Gate-Source Voltage
V
SD
(Volts)
Body-Diode Characteristics
VER 1.1
3
ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Typical Performance Characteristics
Q
g
(nC)
Gate-Charge Characteristics
V
DS
(Volts)
Capacitance Characteristics
V
DS
(Volts)
Maximum Forward Biased Safe Operating Area
Pulse Width(s)
Single Pulse Power Rating Junction-to-Case
Pulse Width(s)
Normalized Maximum Transient Thermal Impedance
VER 1.1
4
ACE1512E
N-Channel Enhancement Mode Field Effect Transistor with ESD Protection
Packing Information
TSOT-23-3
SYMBOLS
A
A1
A2
B
C
D
E
E1
e
e1
L
L1
L2
R
Θ
Θ1
DIMENSIONS IN MILLIMETERS
MIN
NOM
MAX
0.935
0.95
1.10
0.01
0.10
0.85
0.90
0.925
0.30
0.40
0.50
0.10
2.70
2.60
1.40
0.15
2.90
2.80
1.60
0.95BSC
1.90BSC
0.40
0.60REF
0.25BSC
4°
7°NOM
0.25
3.10
3.00
1.80
0.30
0.60
0.10
0°
8°
VER 1.1
5
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