Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, SODIMM-144
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Micron Technology |
| Parts packaging code | MODULE |
| package instruction | DIMM, |
| Contacts | 144 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Is Samacsys | N |
| access mode | SINGLE BANK PAGE BURST |
| Maximum access time | 5.4 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-XDMA-N144 |
| JESD-609 code | e0 |
| memory density | 536870912 bit |
| Memory IC Type | SYNCHRONOUS DRAM MODULE |
| memory width | 64 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 144 |
| word count | 8388608 words |
| character code | 8000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 65 °C |
| Minimum operating temperature | |
| organize | 8MX64 |
| Package body material | UNSPECIFIED |
| encapsulated code | DIMM |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Peak Reflow Temperature (Celsius) | 235 |
| Certification status | Not Qualified |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| Base Number Matches | 1 |
| MT4LSDT864HG-13EXX | MT4LSDT1664HG-133XX | QFN23200DKAGHWS | MT4LSDT464HG-10EXX | MT4LSDT864HG-10EXX | MT4LSDT864HY-133XX | MT4LSDT864LHG-133XX | |
|---|---|---|---|---|---|---|---|
| Description | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, SODIMM-144 | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, SODIMM-144 | Fixed Resistor, Thin Film, 0.025W, 2320ohm, 100V, 0.5% +/-Tol, -100,100ppm/Cel, 0202, | Synchronous DRAM Module, 4MX64, 6ns, CMOS, SODIMM-144 | Synchronous DRAM Module, 8MX64, 6ns, CMOS, SODIMM-144 | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, LEAD FREE, SODIMM-144 | Synchronous DRAM Module, 8MX64, 5.4ns, CMOS, SODIMM-144 |
| Reach Compliance Code | not_compliant | compliant | unknown | unknown | unknown | compliant | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Number of terminals | 144 | 144 | 2 | 144 | 144 | 144 | 144 |
| Maximum operating temperature | 65 °C | 65 °C | 125 °C | 65 °C | 65 °C | 65 °C | 65 °C |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | SMT | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| technology | CMOS | CMOS | THIN FILM | CMOS | CMOS | CMOS | CMOS |
| Is it Rohs certified? | incompatible | incompatible | - | incompatible | incompatible | conform to | - |
| Maker | Micron Technology | Micron Technology | - | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Parts packaging code | MODULE | MODULE | - | MODULE | MODULE | MODULE | MODULE |
| package instruction | DIMM, | DIMM, | - | DIMM, | DIMM, | DIMM, | DIMM, |
| Contacts | 144 | 144 | - | 144 | 144 | 144 | 144 |
| Is Samacsys | N | N | - | N | N | N | N |
| access mode | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | - | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST |
| Maximum access time | 5.4 ns | 5.4 ns | - | 6 ns | 6 ns | 5.4 ns | 5.4 ns |
| Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | - | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 code | R-XDMA-N144 | R-XDMA-N144 | - | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 | R-XDMA-N144 |
| JESD-609 code | e0 | e0 | - | e0 | e0 | e4 | - |
| memory density | 536870912 bit | 1073741824 bit | - | 268435456 bit | 536870912 bit | 536870912 bit | 536870912 bit |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | - | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
| memory width | 64 | 64 | - | 64 | 64 | 64 | 64 |
| Number of functions | 1 | 1 | - | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | - | 1 | 1 | 1 | 1 |
| word count | 8388608 words | 16777216 words | - | 4194304 words | 8388608 words | 8388608 words | 8388608 words |
| character code | 8000000 | 16000000 | - | 4000000 | 8000000 | 8000000 | 8000000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| organize | 8MX64 | 16MX64 | - | 4MX64 | 8MX64 | 8MX64 | 8MX64 |
| Package body material | UNSPECIFIED | UNSPECIFIED | - | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| encapsulated code | DIMM | DIMM | - | DIMM | DIMM | DIMM | DIMM |
| Package shape | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Peak Reflow Temperature (Celsius) | 235 | 235 | - | 235 | 235 | 260 | - |
| Certification status | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| self refresh | YES | YES | - | YES | YES | YES | YES |
| Maximum supply voltage (Vsup) | 3.6 V | 3.6 V | - | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| Minimum supply voltage (Vsup) | 3 V | 3 V | - | 3 V | 3 V | 3 V | 3 V |
| Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| surface mount | NO | NO | - | NO | NO | NO | NO |
| Temperature level | COMMERCIAL | COMMERCIAL | - | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Gold (Au) | - |
| Terminal form | NO LEAD | NO LEAD | - | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | DUAL | DUAL | - | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 30 | 30 | - | 30 | 30 | 30 | - |
| Base Number Matches | 1 | 1 | - | 1 | 1 | 1 | 1 |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD