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TF2123G-E3-AQ3-R

Description
N-Channel, Type: JFET
CategoryDiscrete semiconductor    Junction field effect transistor (jfets)   
File Size196KB,4 Pages
ManufacturerUTC(Unisonic Technologies Co., Ltd.)
Websitehttp://www.utc-ic.com/
Founded in 1990, Youshun Technology Co., Ltd. focuses on the research and development, design, manufacturing, packaging, testing and marketing of analog ICs and discrete components.
Download Datasheet Parametric View All

TF2123G-E3-AQ3-R Overview

N-Channel, Type: JFET

TF2123G-E3-AQ3-R Parametric

Parameter NameAttribute value
Continuous drain current (Id) at 25°C10mA
Drain-source voltage (Vdss)-
Gate-source threshold voltage-
Drain-source on-resistance-
typeN channel
Maximum power dissipation (Ta=25°C)100mW

TF2123G-E3-AQ3-R Preview

Download Datasheet
UNISONIC TECHNOLOGIES CO., LTD
TF2123
N-CHANNEL JFET CAPACITOR
MICROPHONE APPLICATIONS
DESCRIPTION
N-CHANNEL JFET
The UTC
TF2123
uses advanced trench technology to provide
excellent R
DS (ON)
, low gate charge and operation with low gate
voltages. This device is suitable for use in capacitor microphone
applications.
FEATURES
*Suited for use in audio, telephone capacitor microphones.
*Good voltage characteristic.
*Good transient characteristic.
ORDERING INFORMATION
Ordering Number
TF2123G-xx-AE3-R
TF2123G-xx-AN3-R
TF2123G-xx-AQ3-R
Note: Pin Assignment: S: Source
D: Drain
TF2123L-xx-AE3-R
Package
SOT-23
SOT-523
SOT-723
G: Gate
(1) R: Tape Reel
(2) AE3: SOT-23, AN3: SOT-523, AQ3: SOT-723
(3) xx: refer to CLASSIFICATION OF I
DSS
(4) G: Halogen Free and Lead Free
Pin Assignment
1
2
3
S
D
G
S
D
G
S
D
G
Packing
Tape Reel
Tape Reel
Tape Reel
(1)Packing Type
(2)Package Type
(3)Rank
(4)Green Package
MARKING
TF2123-E3
TF2123-E4
TF2123-E5
E3
E4
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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