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IRF8313PBF

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 9.7A Gate-source threshold voltage: 2.35V @ 25uA Drain-source on-resistance: 15.5mΩ @ 9.7A, 10V Maximum power consumption Dispersion (Ta=25°C): 2W Type: Dual N-channel Dual N-channel, 30V, 9.7A, 15.5mΩ@9.7A, 10V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size252KB,10 Pages
ManufacturerInternational Rectifier(Infineon)
Websitehttp://www.irf.com
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IRF8313PBF Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 9.7A Gate-source threshold voltage: 2.35V @ 25uA Drain-source on-resistance: 15.5mΩ @ 9.7A, 10V Maximum power consumption Dispersion (Ta=25°C): 2W Type: Dual N-channel Dual N-channel, 30V, 9.7A, 15.5mΩ@9.7A, 10V

IRF8313PBF Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C9.7A
Gate-source threshold voltage2.35V @ 25uA
Drain-source on-resistance15.5mΩ @ 9.7A,10V
Maximum power dissipation (Ta=25°C)2W
typeDual N-channel
PD -
97145
IRF8313PbF
Applications
l
l
HEXFET
®
Power MOSFET
Load Switch
DC/DC Conversion
V
DSS
R
DS(on)
max
Qg
30V 15.5m
:
@V
GS
= 10V 6.0nC
Benefits
l
Low Gate Charge and Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
l
20V V
GS
Max. Gate Rating
l
100% Tested for R
G
l
Lead-Free (Qualified to 260°C Reflow)
l
RoHS Compliant (Halogen Free)
Description
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
SO-8
The IRF8313PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the
industry standard SO-8 package. The IRF8313PbF has been optimized for parameters that are
critical in synchronous buck
operation
including Rds(on) and gate charge to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC
converters that power the latest generation of processors for notebook and Netcom applications.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
±20
9.7
8.1
81
2.0
1.3
0.016
-55 to + 175
Units
V
c
A
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W
W/°C
°C
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
42
62.5
Units
°C/W
Notes

through
…
are on page 9
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
1
11/5/08

IRF8313PBF Related Products

IRF8313PBF IRF8313TRPBF
Description Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 9.7A Gate-source threshold voltage: 2.35V @ 25uA Drain-source on-resistance: 15.5mΩ @ 9.7A, 10V Maximum power consumption Dispersion (Ta=25°C): 2W Type: Dual N-channel Dual N-channel, 30V, 9.7A, 15.5mΩ@9.7A, 10V Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 9.7A Gate-source threshold voltage: 2.35V @ 25uA Drain-source on-resistance: 15.5mΩ @ 9.7A, 10V Maximum power consumption Dispersion (Ta=25°C): 2W Type: Dual N-channel Dual N-channel, 30V, 9.7A, 15.5mΩ@9.7A, 10V
Drain-source voltage (Vdss) 30V 30V
Continuous drain current (Id) at 25°C 9.7A 9.7A
Gate-source threshold voltage 2.35V @ 25uA 2.35V @ 25uA
Drain-source on-resistance 15.5mΩ @ 9.7A,10V 15.5mΩ @ 9.7A,10V
Maximum power dissipation (Ta=25°C) 2W 2W
type Dual N-channel Dual N-channel
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