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HMBT6427

Description
40V 0.5A NPN epitaxial planar transistor
CategoryDiscrete semiconductor   
File Size36KB,4 Pages
ManufacturerHI-SINCERITY MICROELECTRONICS CORP.
Download Datasheet View All

HMBT6427 Overview

40V 0.5A NPN epitaxial planar transistor

Features

Product Name: 40V 0.5A NPN Epitaxial Planar Transistor


Product model: HMBT6427


Product Description:


Darlington Transistor



parameter:


Type: NPN


BVCEO: 40V


IC: 0.5A


PD: 0.225W


hFE: MIN 20000


hFE: Max. 200000


VCE(sat): Max.1.2V


RoHS: None (with lead)


Package: SOT-23


HMBT6427 Preview

Download Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6846
Issued Date : 1995.07.21
Revised Date : 2004.08.31
Page No. : 1/4
HMBT6427
NPN EPITAXIAL PLANAR TRANSISTOR
Description
Darlington Transistor
Absolute Maximum Ratings
SOT-23
Maximum Temperatures
Storage Temperature........................................................................................................................... -55 ~ +150
°C
Junction Temperature................................................................................................................... +150
°C
Maximum
Maximum Power Dissipation
Total Power Dissipation (T
A
=25°C)............................................................................................................... 225 mW
Maximum Voltages and Currents (T
A
=25°C)
V
CBO
Collector to Base Voltage ........................................................................................................................... 40 V
V
CEO
Collector to Emitter Voltage........................................................................................................................ 40 V
V
EBO
Emitter to Base Voltage .............................................................................................................................. 12 V
I
C
Collector Current ....................................................................................................................................... 500 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
V
BE(on)
*h
FE1
*h
FE2
*h
FE3
Cob
Min.
40
40
12
-
-
-
-
-
-
-
10
20
14
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
1
50
1.2
1.5
2
1.75
100
200
140
7
Unit
V
V
V
nA
uA
nA
V
V
V
V
K
K
K
pF
I
C
=100uA
I
C
=10mA
I
E
=10uA
V
CB
=30V
V
CB
=25V
V
EB
=10V
I
C
=50mA, I
B
=0.5mA
I
C
=500mA, I
B
=0.5mA
I
C
=500mA, I
B
=0.5mA
V
CE
=5V, I
C
=50mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=500mA
V
CB
=10V, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
HMBT6427
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