Drain-source voltage (Vdss): 55V Continuous drain current (Id) (at 25°C): 56A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 16mΩ @ 34A, 10V Maximum power dissipation (Ta= 25°C): 110W Type: N-channel N-channel, 55V, 56A, 16mΩ@10V
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | LEAD FREE, PLASTIC, DPAK-3 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 15 weeks |
| Other features | AVALANCHE RATED, HIGH RELIABILITY |
| Avalanche Energy Efficiency Rating (Eas) | 130 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V |
| Maximum drain current (Abs) (ID) | 56 A |
| Maximum drain current (ID) | 30 A |
| Maximum drain-source on-resistance | 0.016 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252AA |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 110 W |
| Maximum pulsed drain current (IDM) | 220 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRFR2405TRPBF | |
|---|---|
| Description | Drain-source voltage (Vdss): 55V Continuous drain current (Id) (at 25°C): 56A Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 16mΩ @ 34A, 10V Maximum power dissipation (Ta= 25°C): 110W Type: N-channel N-channel, 55V, 56A, 16mΩ@10V |
| Is it Rohs certified? | conform to |
| package instruction | LEAD FREE, PLASTIC, DPAK-3 |
| Reach Compliance Code | not_compliant |
| ECCN code | EAR99 |
| Factory Lead Time | 15 weeks |
| Other features | AVALANCHE RATED, HIGH RELIABILITY |
| Avalanche Energy Efficiency Rating (Eas) | 130 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V |
| Maximum drain current (Abs) (ID) | 56 A |
| Maximum drain current (ID) | 30 A |
| Maximum drain-source on-resistance | 0.016 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-252AA |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 110 W |
| Maximum pulsed drain current (IDM) | 220 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
