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BZT585B36T-7

Description
Maximum power: 350mW Accuracy: - Reverse leakage current: 0.05uA @ 25.2V Regulated voltage value (typical value): 36V 36V 350mW
CategoryDiscrete semiconductor    Zener diode   
File Size174KB,4 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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BZT585B36T-7 Overview

Maximum power: 350mW Accuracy: - Reverse leakage current: 0.05uA @ 25.2V Regulated voltage value (typical value): 36V 36V 350mW

BZT585B36T-7 Parametric

Parameter NameAttribute value
Maximum power350mW
Accuracy-
Reverse leakage current0.05uA @ 25.2V
Stable voltage value (typical value)36V

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Description Maximum power: 350mW Accuracy: - Reverse leakage current: 0.05uA @ 25.2V Regulated voltage value (typical value): 36V 36V 350mW Maximum power: 350mW Accuracy: - Reverse leakage current: 0.05uA @ 21V Voltage regulation value (typical value): 30V DIODE ZENER 30V 350mW Maximum power: 350mW Accuracy: - Reverse leakage current: 3uA @ 4V Regulated voltage value (typical value): 6.2V DIODE ZENER 6.2V 350mW Maximum power: 350mW Accuracy: - Reverse leakage current: 0.1uA @ 8V Voltage regulation value (typical value): 13V DIODE ZENER 13V 350mW Maximum power: 350mW Accuracy: - Reverse leakage current: 0.2uA @ 7V Voltage regulation value (typical value): 10V DIODE ZENER 10V 350mW
Maximum power 350mW 350mW 350mW 350mW 350mW
Reverse leakage current 0.05uA @ 25.2V 0.05uA @ 21V 3uA @ 4V 0.1uA @ 8V 0.2uA @ 7V
Stable voltage value (typical value) 36V 30V 6.2V 13V 10V
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