MRF5943R2 datasheet, PDF - EEWORLD Datasheet

MRF5943R2: DescriptionTRANSISTOR,BJT,NPN,30V V(BR)CEO,400MA I(C),SO; CategoryThe transistor; File Size167KB，2 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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MRF5943R2 Overview

TRANSISTOR,BJT,NPN,30V V(BR)CEO,400MA I(C),SO

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown
Is Samacsys	N
Maximum collector current (IC)	0.4 A
Collector-emitter maximum voltage	30 V
Configuration	Single
Minimum DC current gain (hFE)	25
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G8
JESD-609 code	e0
Number of components	1
Number of terminals	8
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1550 MHz
VCEsat-Max	0.2 V
Base Number Matches	1

	MRF5943R2	MRF5943
Description	TRANSISTOR,BJT,NPN,30V V(BR)CEO,400MA I(C),SO	TRANSISTOR,BJT,NPN,30V V(BR)CEO,400MA I(C),SO
Is it Rohs certified?	incompatible	incompatible
Maker	NXP	NXP
package instruction	SMALL OUTLINE, R-PDSO-G8	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown	unknown
Is Samacsys	N	N
Maximum collector current (IC)	0.4 A	0.4 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	Single	Single
Minimum DC current gain (hFE)	25	25
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G8	R-PDSO-G8
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	8	8
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	1 W	1 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	1550 MHz	1600 MHz
VCEsat-Max	0.2 V	0.2 V
Base Number Matches	1	1

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