TSM70N900CH C5G datasheet, PDF

TSM70N900CH C5G: DescriptionMOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm; Categorysemiconductor Discrete semiconductor The transistor MOSFET; File Size812KB，11 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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TSM70N900CH C5G Overview

MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm

Parameter Name	Attribute value
Maker	Taiwan Semiconductor
Product Category	MOSFET
technology	Si
Installation style	Through Hole
Package/box	TO-251-3
Number of channels	1 Channel
Transistor polarity	N-Channel
Vds - drain-source breakdown voltage	700 V
Id-continuous drain current	4.5 A
Rds On - drain-source on-resistance	830 mOhms
Vgs th-gate-source threshold voltage	2 V
Vgs - gate-source voltage	10 V
Qg-gate charge	9.7 nC
Minimum operating temperature	- 55 C
Maximum operating temperature	+ 150 C
Pd-power dissipation	50 W
Configuration	Single
channel mode	Enhancement
Encapsulation	Tube
product	Rectifiers
Transistor type	1 N-Channel
Fall time	48 ns
Rise Time	54 ns
Factory packaging quantity	1875
Typical shutdown delay time	34 ns
Typical switch-on delay time	20 ns

	TSM70N900CH C5G	TSM70N900CP ROG	TSM70N900CI C0G
Description	MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm	MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm	MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm
Maker	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Product Category	MOSFET	MOSFET	MOSFET
technology	Si	Si	Si
Installation style	Through Hole	SMD/SMT	Through Hole
Package/box	TO-251-3	TO-252-3	ITO-220-3
Number of channels	1 Channel	1 Channel	1 Channel
Transistor polarity	N-Channel	N-Channel	N-Channel
Vds - drain-source breakdown voltage	700 V	700 V	700 V
Id-continuous drain current	4.5 A	4.5 A	4.5 A
Rds On - drain-source on-resistance	830 mOhms	830 mOhms	900 mOhms
Vgs th-gate-source threshold voltage	2 V	2 V	2 V
Vgs - gate-source voltage	10 V	10 V	30 V
Qg-gate charge	9.7 nC	9.7 nC	9.7 nC
Minimum operating temperature	- 55 C	- 55 C	- 55 C
Maximum operating temperature	+ 150 C	+ 150 C	+ 150 C
Pd-power dissipation	50 W	50 W	20 W
Configuration	Single	Single	Single
channel mode	Enhancement	Enhancement	Enhancement
Fall time	48 ns	48 ns	48 ns
Rise Time	54 ns	54 ns	54 ns
Factory packaging quantity	1875	2500	1000
Typical shutdown delay time	34 ns	34 ns	34 ns
Typical switch-on delay time	20 ns	20 ns	20 ns
Encapsulation	Tube	Reel	Tube
product	Rectifiers	Rectifiers	-
Transistor type	1 N-Channel	1 N-Channel	-

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