TSM70N900CI C0G datasheet, PDF

TSM70N900CI C0G: DescriptionMOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm; Categorysemiconductor Discrete semiconductor The transistor MOSFET; File Size812KB，11 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/; Environmental Compliance

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TSM70N900CI C0G Overview

MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm

Parameter Name	Attribute value
Maker	Taiwan Semiconductor
Product Category	MOSFET
technology	Si
Installation style	Through Hole
Package/box	ITO-220-3
Number of channels	1 Channel
Transistor polarity	N-Channel
Vds - drain-source breakdown voltage	700 V
Id-continuous drain current	4.5 A
Rds On - drain-source on-resistance	900 mOhms
Vgs th-gate-source threshold voltage	2 V
Vgs - gate-source voltage	30 V
Qg-gate charge	9.7 nC
Minimum operating temperature	- 55 C
Maximum operating temperature	+ 150 C
Pd-power dissipation	20 W
Configuration	Single
channel mode	Enhancement
Encapsulation	Tube
Fall time	48 ns
Rise Time	54 ns
Factory packaging quantity	1000
Typical shutdown delay time	34 ns
Typical switch-on delay time	20 ns

	TSM70N900CI C0G	TSM70N900CH C5G	TSM70N900CP ROG
Description	MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm	MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm	MOSFET Power MOSFET, N-CHAN 700V, 4.5A, 900mOhm
Maker	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Product Category	MOSFET	MOSFET	MOSFET
technology	Si	Si	Si
Installation style	Through Hole	Through Hole	SMD/SMT
Package/box	ITO-220-3	TO-251-3	TO-252-3
Number of channels	1 Channel	1 Channel	1 Channel
Transistor polarity	N-Channel	N-Channel	N-Channel
Vds - drain-source breakdown voltage	700 V	700 V	700 V
Id-continuous drain current	4.5 A	4.5 A	4.5 A
Rds On - drain-source on-resistance	900 mOhms	830 mOhms	830 mOhms
Vgs th-gate-source threshold voltage	2 V	2 V	2 V
Vgs - gate-source voltage	30 V	10 V	10 V
Qg-gate charge	9.7 nC	9.7 nC	9.7 nC
Minimum operating temperature	- 55 C	- 55 C	- 55 C
Maximum operating temperature	+ 150 C	+ 150 C	+ 150 C
Pd-power dissipation	20 W	50 W	50 W
Configuration	Single	Single	Single
channel mode	Enhancement	Enhancement	Enhancement
Fall time	48 ns	48 ns	48 ns
Rise Time	54 ns	54 ns	54 ns
Factory packaging quantity	1000	1875	2500
Typical shutdown delay time	34 ns	34 ns	34 ns
Typical switch-on delay time	20 ns	20 ns	20 ns
Encapsulation	Tube	Tube	Reel
product	-	Rectifiers	Rectifiers
Transistor type	-	1 N-Channel	1 N-Channel

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