ZVN3310ASTOA datasheet, PDF - EEWORLD Datasheet

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ZVN3310ASTOA: DescriptionMOSFET N-CH 100V 200MA TO92-3; Categorysemiconductor Discrete semiconductor; File Size78KB，3 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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ZVN3310ASTOA Overview

MOSFET N-CH 100V 200MA TO92-3

ZVN3310ASTOA Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	200mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	10 ohms @ 500mA, 10V
Vgs (th) (maximum value) when different Id	2.4V @ 1mA
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	40pF @ 25V
FET function	-
Power dissipation (maximum)	625mW（Ta）
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	Through hole
Supplier device packaging	E-Line (TO-92 compatible)
Package/casing	E-Line-3

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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 – MARCH 94

FEATURES

* 100 Volt V

* R

DS(on)

= 10Ω

ZVN3310A

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

tot

stg

VALUE

100

200

625

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source Breakdown

Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage Drain

Current

On-State Drain Current(1)

Static Drain-Source On-State

Resistance (1)

SYMBOL MIN.

DSS

GS(th)

GSS

DSS

D(on)

DS(on)

100

500

100

0.8

2.4

MAX. UNIT CONDITIONS.

µA

Ω

≈25V,

=500mA

=25V, V

=0V, f=1MHz

=1mA, V

=0V

ID=1mA, V

= V

=± 20V, V

=0V

=100V, V

=80V, V

=0V, T=125°C

(2)

=25V, V

=10V

=10V,I

=500mA

=25V,I

=500mA

Forward Transconductance(1)(2 g

)

Input Capacitance (2)

Common Source Output

Capacitance (2)

Reverse Transfer Capacitance

(2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

iss

oss

rss

d(on)

d(off)

3-378

ZVN3310ASTOA Related Products

	ZVN3310ASTOA	ZVN3310ASTOB
Description	MOSFET N-CH 100V 200MA TO92-3	MOSFET N-CH 100V 200MA TO92-3
FET type	N channel	N channel
technology	MOSFET (metal oxide)	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V	100V
Current - Continuous Drain (Id) at 25°C	200mA（Ta）	200mA（Ta）
Drive voltage (maximum Rds On, minimum Rds On)	10V	10V
Rds On (maximum value) when different Id, Vgs	10 ohms @ 500mA, 10V	10 ohms @ 500mA, 10V
Vgs (th) (maximum value) when different Id	2.4V @ 1mA	2.4V @ 1mA
Vgs (maximum value)	±20V	±20V
Input capacitance (Ciss) at different Vds (maximum value)	40pF @ 25V	40pF @ 25V
Power dissipation (maximum)	625mW（Ta）	625mW（Ta）
Operating temperature	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）
Installation type	Through hole	Through hole
Supplier device packaging	E-Line (TO-92 compatible)	E-Line (TO-92 compatible)
Package/casing	E-Line-3	E-Line-3

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