AT29BV020-12TU-T datasheet, PDF

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AT29BV020-12TU-T: DescriptionIC FLASH 2M PARALLEL 32TSOP; Categorystorage; File Size204KB，15 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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AT29BV020-12TU-T Overview

IC FLASH 2M PARALLEL 32TSOP

AT29BV020-12TU-T Parametric

Parameter Name	Attribute value
memory type	non-volatile
memory format	flash memory
technology	FLASH
storage	2Mb （256K x 8）
Write cycle time - words, pages	20ms
interview time	120ns
memory interface	in parallel
Voltage - Power	2.7 V ~ 3.6 V
Operating temperature	-40°C ~ 85°C（TC）
Installation type	surface mount
Package/casing	32-TFSOP (0.724", 18.40mm wide)
Supplier device packaging	32-TSOP

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Features

•

Single Supply Voltage, Range 2.7V to 3.6V

Single Supply for Read and Write

Software Protected Programming

Fast Read Access Time - 120 ns

Low Power Dissipation

– 15 mA Active Current

– 40 µA CMOS Standby Current

Sector Program Operation

– Single Cycle Reprogram (Erase and Program)

– 1024 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

Two 8K Bytes Boot Blocks with Lockout

Fast Sector Program Cycle Time – 20 ms Max.

Internal Program Control and Timer

DATA Polling for End of Program Detection

Typical Endurance > 10,000 Cycles

CMOS and TTL Compatible Inputs and Outputs

Commercial and Industrial Temperature Ranges

•

2-megabit

(256K x 8)

Single 2.7-volt

Battery-Voltage

™

Flash Memory

Description

The AT29BV020 is a 2.7-volt-only in-system Flash Programmable and Erasable Read

Only Memory (PEROM). Its 2 megabits of memory is organized as 262,144 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology,

the device offers access times to 120 ns, and a low 54 mW power dissipation. When

the device is deselected, the CMOS standby current is less than 40 µA. The device

endurance is such that any sector can typically be written to in excess of 10,000 times.

The programming algorithm is compatible with other devices in Atmel’s Low Voltage

Flash family of products.

AT29BV020

Pin Configurations

Pin Name

A0 - A17

I/O0 - I/O7

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

A11

A13

A14

A17

VCC

A16

A15

A12

TSOP Top View

Type 1

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

PLCC Top View

A12

A15

A16

VCC

A17

I/O1

I/O2

GND

I/O3

I/O4

I/O5

I/O6

I/O0

A14

A13

A11

A10

I/O7

Rev. 0402D–FLASH–05/02

To allow for simple in-system reprogrammability, the AT29BV020 does not require high input

voltages for programming. The device can be operated with a single 2.7V to 3.6V supply.

Reading data out of the device is similar to reading from an EPROM. Reprogramming the

AT29BV020 is performed on a sector basis; 256 bytes of data are loaded into the device and

then simultaneously programmed.

During a reprogram cycle, the address locations and 256 bytes of data are captured at micro-

processor speed and internally latched, freeing the address and data bus for other operations.

Following the initiation of a program cycle, the device will automatically erase the sector and

then program the latched data using an internal control timer. The end of a program cycle can

be detected by DATA polling of I/O7. Once the end of a program cycle has been detected, a

new access for a read or program can begin.

Block Diagram

Device

Operation

READ:

The AT29BV020 is accessed like an EPROM. When CE and OE are low and WE is

high, the data stored at the memory location determined by the address pins is asserted on

the outputs. The outputs are put in the high impedance state whenever CE or OE is high. This

dual-line control gives designers flexibility in preventing bus contention.

SOFTWARE DATA PROTECTION PROGRAMMING:

The AT29BV020 has 1024 individual

sectors, each 256 bytes. Using the software data protection feature, byte loads are used to

enter the 256 bytes of a sector to be programmed. The AT29BV020 can only be programmed

or reprogrammed using the software data protection feature. The device is programmed on a

sector basis. If a byte of data within the sector is to be changed, data for the entire 256-byte

sector must be loaded into the device. The data in any byte that is not loaded during the pro-

gramming of its sector will be indeterminate. The AT29BV020 automatically does a sector

erase prior to loading the data into the sector. An erase command is not required.

Software data protection protects the device from inadvertent programming. A series of three

program commands to specific addresses with specific data must be presented to the device

before programming may occur. The same three program commands must begin each pro-

gram operation. All software program commands must obey the sector program timing

specifications. Power transitions will not reset the software data protection feature; however,

the software feature will guard against inadvertent program cycles during power transitions.

AT29BV020

0402D–FLASH–05/02

AT29BV020

Any attempt to write to the device without the 3-byte command sequence will start the internal

write timers. No data will be written to the device; however, for the duration of t

, a read oper-

ation will effectively be a polling operation.

After the software data protection’s 3-byte command code is given, a byte load is performed

by applying a low pulse on the WE or CE input with CE or WE low (respectively) and OE high.

The address is latched on the falling edge of CE or WE, whichever occurs last. The data is

latched by the first rising edge of CE or WE.

The 256 bytes of data must be loaded into each sector. Any byte that is not loaded during the

programming of its sector will be indeterminated. Once the bytes of a sector are loaded into

the device, they are simultaneously programmed during the internal programming period.

After the first data byte has been loaded into the device, successive bytes are entered in the

same manner. Each new byte to be programmed must have its high-to-low transition on WE

(or CE) within 150 µs of the low-to-high transition of WE (or CE) of the preceding byte. If a

high-to-low transition is not detected within 150 µs of the last low-to-high transition, the load

period will end and the internal programming period will start. A8 to A17 specify the sector

address. The sector address must be valid during each high-to-low transition of WE (or CE).

A0 to A7 specify the byte address within the sector. The bytes may be loaded in any order;

sequential loading is not required.

HARDWARE DATA PROTECTION:

Hardware features protect against inadvertent pro-

grams to the AT29BV020 in the following ways: (a) V

sense – if V

is below 2.0V (typical),

the program function is inhibited; (b) V

power on delay – once V

has reached the V

sense level, the device will automatically time out 10 ms (typical) before programming; (c) Pro-

gram inhibit – holding any one of OE low, CE high or WE high inhibits program cycles; and (d)

Noise filter – pulses of less than 15 ns (typical) on the WE or CE inputs will not initiate a pro-

gram cycle.

INPUT LEVELS:

While operating with a 2.7V to 3.6V power supply, the address inputs and

control inputs

(OE,

CE and WE) may be driven from 0 to 5.5V without adversely affecting the

operation of the device. The I/O lines can only be driven from 0 to V

+ 0.6V.

PRODUCT IDENTIFICATION:

The product identification mode identifies the device and

manufacturer as Atmel. It may be accessed by hardware or software operation. The hardware

operation mode can be used by an external programmer to identify the correct programming

algorithm for the Atmel product. In addition, users may wish to use the software product identi-

fication mode to identify the part (i.e., using the device code), and have the system software

use the appropriate sector size for program operations. In this manner, the user can have a

common board design for 256K to 4-megabit densities and, with each density’s sector size in

a memory map, have the system software apply the appropriate sector size.

For details, see Operating Modes (for hardware operation) or Software Product Identification.

The manufacturer and device code is the same for both methods of identification.

DATA POLLING:

The AT29BV020 features DATA polling to indicate the end of a program

cycle. During a program cycle an attempted read of the last byte loaded will result in the com-

plement of the loaded data on I/O7. Once the program cycle has been completed, true data is

valid on all outputs and the next cycle may begin. DATA polling may begin at any time during

the program cycle.

TOGGLE BIT:

In addition to DATA polling the AT29BV020 provides another method for

determining the end of a program or erase cycle. During a program or erase operation, suc-

cessive attempts to read data from the device will result in I/O6 toggling between one and

zero. Once the program cycle has completed, I/O6 will stop toggling and valid data will be

read. Examining the toggle bit may begin at any time during a program cycle.

0402D–FLASH–05/02

OPTIONAL CHIP ERASE MODES:

The entire device may be erased by using a 6-byte soft-

ware code. Please see Software Chip Erase application note for details.

BOOT BLOCK PROGRAMMING LOCKOUT:

The AT29BV020 has two designated memory

blocks that have a programming lockout feature. This feature prevents programming of data in

the designated block once the feature has been enabled. Each of these blocks consists of 8K

bytes; the programming lockout feature can be set independently for either block. While the

lockout feature does not have to be activated, it can be activated for either or both blocks.

These two 8K memory sections are referred to as

boot blocks

. Secure code which will bring up

a system can be contained in a boot block. The AT29BV020 blocks are located in the first 8K

bytes of memory and the last 8K bytes of memory. The boot block programming lockout fea-

ture can therefore support systems that boot from the lower addresses of memory or the

higher addresses. Once the programming lockout feature has been activated, the data in that

block can no longer be erased or programmed; data in other memory locations can still be

changed through the regular programming methods. To activate the lockout feature, a series

of seven program commands to specific addresses with specific data must be performed.

Please see Boot Block Lockout Feature Enable Algorithm.

If the boot block lockout feature has been activated on either block, the chip erase function will

be disabled.

BOOT BLOCK LOCKOUT DETECTION:

A software method is available to determine

whether programming of either boot block section is locked out. See Software Product Identifi-

cation Entry and Exit sections. When the device is in the software product identification mode,

a read from location 00002H will show if programming the lower address boot block is locked

out while reading location 3FFF2H will do so for the upper boot block. If the data is FE, the cor-

responding block can be programmed; if the data is FF, the program lockout feature has been

activated and the corresponding block cannot be programmed. The software product identifi-

cation exit mode should be used to return to standard operation.

Absolute Maximum Ratings*

Temperature Under Bias................................ -55°C to +125°C

Storage Temperature ..................................... -65°C to +150°C

All Input Voltages (Including NC Pins)

with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages

with Respect to Ground .............................-0.6V to V

+ 0.6V

Voltage on A9 (Including NC Pins)

with Respect to Ground ...................................-0.6V to +13.5V

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect

device reliability.

AT29BV020

0402D–FLASH–05/02

AT29BV020-12TU-T Related Products

	AT29BV020-12TU-T	AT29BV020-12JU	AT29BV020-15JU-T	AT29BV020-15TU-T
Description	IC FLASH 2M PARALLEL 32TSOP	IC FLASH 2M PARALLEL 32PLCC	IC FLASH 2M PARALLEL 32PLCC	IC FLASH 2M PARALLEL 32TSOP
memory type	non-volatile	non-volatile	non-volatile	non-volatile
memory format	flash memory	flash memory	flash memory	flash memory
technology	FLASH	FLASH	FLASH	FLASH
storage	2Mb （256K x 8）	2Mb （256K x 8）	2Mb （256K x 8）	2Mb （256K x 8）
Write cycle time - words, pages	20ms	20ms	20ms	20ms
interview time	120ns	120ns	150ns	150ns
memory interface	in parallel	in parallel	in parallel	in parallel
Voltage - Power	2.7 V ~ 3.6 V	2.7 V ~ 3.6 V	2.7 V ~ 3.6 V	2.7 V ~ 3.6 V
Operating temperature	-40°C ~ 85°C（TC）	-40°C ~ 85°C（TC）	-40°C ~ 85°C（TC）	-40°C ~ 85°C（TC）
Installation type	surface mount	surface mount	surface mount	surface mount
Package/casing	32-TFSOP (0.724", 18.40mm wide)	32-LCC (J-lead)	32-LCC (J-lead)	32-TFSOP (0.724", 18.40mm wide)
Supplier device packaging	32-TSOP	32-PLCC	32-PLCC（11.43x13.97）	32-TSOP

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