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RN1963FE(TE85L,F)

Description
TRANS 2NPN PREBIAS 0.1W ES6
CategoryDiscrete semiconductor    The transistor   
File Size568KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN1963FE(TE85L,F) Overview

TRANS 2NPN PREBIAS 0.1W ES6

RN1963FE(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)70
Number of components2
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.1 W
surface mountYES
Transistor component materialsSILICON

RN1963FE(TE85L,F) Related Products

RN1963FE(TE85L,F) RN1961FE(TE85L,F) RN1964FE(TE85L,F) RN1966FE(TE85L,F) RN1962FE(TE85L,F) RN1965FE(TE85L,F)
Description TRANS 2NPN PREBIAS 0.1W ES6 TRANS 2NPN PREBIAS 0.1W ES6 TRANS 2NPN PREBIAS 0.1W ES6 TRANS 2NPN PREBIAS 0.1W ES6 TRANS 2NPN PREBIAS 0.1W ES6 TRANS 2PNP PREBIAS 0.1W ES6
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Maker Toshiba Semiconductor - Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor
Maximum collector current (IC) 0.1 A - 0.1 A 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 70 - 80 80 50 80
Number of components 2 - 2 2 2 2
Polarity/channel type NPN - NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.1 W - 0.1 W 0.1 W 0.1 W 0.1 W
surface mount YES - YES YES YES YES
Transistor component materials SILICON - SILICON SILICON SILICON SILICON

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