RN1966FE(TE85L,F) datasheet, PDF

RN1966FE(TE85L,F): DescriptionTRANS 2NPN PREBIAS 0.1W ES6; CategoryDiscrete semiconductor The transistor; File Size568KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN1966FE(TE85L,F) Overview

TRANS 2NPN PREBIAS 0.1W ES6

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	80
Number of components	2
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.1 W
surface mount	YES
Transistor component materials	SILICON
Base Number Matches	1

	RN1966FE(TE85L,F)	RN1961FE(TE85L,F)	RN1964FE(TE85L,F)	RN1962FE(TE85L,F)	RN1965FE(TE85L,F)	RN1963FE(TE85L,F)
Description	TRANS 2NPN PREBIAS 0.1W ES6	TRANS 2NPN PREBIAS 0.1W ES6	TRANS 2NPN PREBIAS 0.1W ES6	TRANS 2NPN PREBIAS 0.1W ES6	TRANS 2PNP PREBIAS 0.1W ES6	TRANS 2NPN PREBIAS 0.1W ES6
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	-	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	80	-	80	50	80	70
Number of components	2	-	2	2	2	2
Polarity/channel type	NPN	-	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.1 W	-	0.1 W	0.1 W	0.1 W	0.1 W
surface mount	YES	-	YES	YES	YES	YES
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
Maker	-	-	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor	Toshiba Semiconductor

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