SPB10N10 G datasheet, PDF - EEWORLD Datasheet

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SPB10N10 G: DescriptionMOSFET N-CH 100V 10.3A D2PAK; Categorysemiconductor Discrete semiconductor; File Size375KB，4 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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SPB10N10 G Overview

MOSFET N-CH 100V 10.3A D2PAK

SPB10N10 G Parametric

Parameter Name	Attribute value
FET type	N channel
technology	MOSFET (metal oxide)
Drain-source voltage (Vdss)	100V
Current - Continuous Drain (Id) at 25°C	10.3A（Tc）
Drive voltage (maximum Rds On, minimum Rds On)	10V
Rds On (maximum value) when different Id, Vgs	170 milliohms @ 7.8A, 10V
Vgs (th) (maximum value) when different Id	4V @ 21µA
Gate charge (Qg) at different Vgs (maximum value)	19.4nC @ 10V
Vgs (maximum value)	±20V
Input capacitance (Ciss) at different Vds (maximum value)	426pF @ 25V
FET function	-
Power dissipation (maximum)	50W（Tc）
Operating temperature	-55°C ~ 175°C（TJ）
Installation type	surface mount
Supplier device packaging	PG-TO263-3-2
Package/casing	TO-263-3, D²Pak (2-lead + tab), TO-263AB

SPB10N10 G Related Products

	SPB10N10 G	SPP10N10	SPI10N10	SPB10N10
Description	MOSFET N-CH 100V 10.3A D2PAK	10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA	10.3 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Is it Rohs certified?	-	conform to	conform to	incompatible
Maker	-	Infineon	Infineon	Infineon
Parts packaging code	-	TO-262AA	TO-220AB	D2PAK
package instruction	-	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	PLASTIC, TO-263, 3 PIN
Contacts	-	3	3	4
Reach Compliance Code	-	unknown	compli	_compli
ECCN code	-	EAR99	EAR99	EAR99
Other features	-	AVALANCE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	-	60 mJ	60 mJ	60 mJ
Configuration	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	-	100 V	100 V	100 V
Maximum drain current (Abs) (ID)	-	10.3 A	10.3 A	10.3 A
Maximum drain current (ID)	-	10.3 A	10.3 A	10.3 A
Maximum drain-source on-resistance	-	0.17 Ω	0.17 Ω	0.17 Ω
FET technology	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	-	TO-220AB	TO-220AB	TO-263AB
JESD-30 code	-	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2
JESD-609 code	-	e3	e3	e0
Number of components	-	1	1	1
Number of terminals	-	3	3	2
Operating mode	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	-	175 °C	175 °C	175 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	220
Polarity/channel type	-	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	-	50 W	50 W	50 W
Maximum pulsed drain current (IDM)	-	41.2 A	41.2 A	41.2 A
Certification status	-	Not Qualified	Not Qualified	Not Qualified
surface mount	-	NO	NO	YES
Terminal surface	-	Matte Tin (Sn)	Matte Tin (Sn)	Tin/Lead (Sn/Pb)
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE	GULL WING
Terminal location	-	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	-	SILICON	SILICON	SILICON

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