SIHP14N60E-GE3 datasheet, PDF - EEWORLD Datasheet

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SIHP14N60E-GE3: DescriptionMOSFET N-CH 600V 13A TO220AB; CategoryDiscrete semiconductor The transistor; File Size146KB，7 Pages; ManufacturerVishay; Websitehttp://www.vishay.com; Environmental Compliance

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SIHP14N60E-GE3 Overview

MOSFET N-CH 600V 13A TO220AB

SIHP14N60E-GE3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Vishay
package instruction	HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Reach Compliance Code	compliant
Factory Lead Time	12 weeks
Avalanche Energy Efficiency Rating (Eas)	136 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	13 A
Maximum drain-source on-resistance	0.309 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	32 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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SiHP14N60E

www.vishay.com

Vishay Siliconix

E Series Power MOSFET

PRODUCT SUMMARY

(V) at T

max.

DS(on)

typ. () at 25 °C

max. (nC)

(nC)

Configuration

= 10 V

Single

650

0.269

FEATURES

• Low figure-of-merit (FOM) R

x Q

• Low input capacitance (C

iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q

)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

- High-intensity discharge (HID)

TO-220AB

N-Channel MOSFET

- Fluorescent ballast lighting

• Industrial

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

- Solar (PV inverters)

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

TO-220AB

SiHP14N60E-GE3

ABSOLUTE MAXIMUM RATINGS

= 25 °C, unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

= 150 °C)

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche

Energy

, T

stg

= 125 °C

for 10 s

dV/dt

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt

Soldering Recommendations (Peak Temperature)

at 10 V

= 25 °C

= 100 °C

SYMBOL

LIMIT

600

± 30

1.2

136

147

-55 to +150

300

W/°C

°C

V/ns

°C

UNIT

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V

= 140 V, starting T

= 25 °C, L = 28.2 mH, R

= 25

,

= 3.1 A.

c. 1.6 mm from case.

d. I



, dI/dt = 100 A/μs, starting T

= 25 °C.

S16-0709-Rev. A, 18-Apr-16

Document Number: 91662

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

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