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GP2M008A060CG

Description
MOSFET N-CH 600V 7.5A DPAK
Categorysemiconductor    Discrete semiconductor   
File Size513KB,6 Pages
ManufacturerGlobal Communications
Environmental Compliance
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GP2M008A060CG Overview

MOSFET N-CH 600V 7.5A DPAK

GP2M008A060CG Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)600V
Current - Continuous Drain (Id) at 25°C7.5A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs1.2 ohms @ 3.75A, 10V
Vgs (th) (maximum value) when different Id5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)23nC @ 10V
Vgs (maximum value)±30V
Input capacitance (Ciss) at different Vds (maximum value)1063pF @ 25V
FET function-
Power dissipation (maximum)120W(Tc)
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingD-Pak
Package/casingTO-252-3, DPak (2 leads + tab), SC-63
GP2M008A060CG
GP2M008A060PG(H)
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
D-PAK
I-PAK
N-channel MOSFET
BV
DSS
600V
I
D
7.5A
R
DS(on)
<1.2W
Device
GP2M008A060CG/GP2M008A060PG
GP2M008A060PGH
Package
D-PAK/I-PAK
I-PAK
Marking
GP2M008A060CG/GP2M008A060PG
GP2M008A060PGH
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation
Peak Diode Recovery dv/dt
(Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
V
DSS
V
GS
T
C
= 25
T
C
= 100
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25
Derate above 25
P
D
dv/dt
T
J
, T
STG
T
L
Value
600
±30
7.5
4.12
30
223
7.5
12
120
0.96
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
October 2012 : Rev0
Symbol
R
qJC
R
qJA
Value
1.04
110
Unit
℃/W
℃/W
1/6
www.GPTechGroup.com

GP2M008A060CG Related Products

GP2M008A060CG GP2M008A060PG GP2M008A060PGH
Description MOSFET N-CH 600V 7.5A DPAK MOSFET N-CH 600V 7.5A IPAK MOSFET N-CH 600V 7.5A IPAK
FET type N channel N channel N channel
technology MOSFET (metal oxide) MOSFET (metal oxide) MOSFET (metal oxide)
Drain-source voltage (Vdss) 600V 600V 600V
Current - Continuous Drain (Id) at 25°C 7.5A(Tc) 7.5A(Tc) 7.5A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V 10V 10V
Rds On (maximum value) when different Id, Vgs 1.2 ohms @ 3.75A, 10V 1.2 ohms @ 3.75A, 10V 1.2 ohms @ 3.75A, 10V
Vgs (th) (maximum value) when different Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate charge (Qg) at different Vgs (maximum value) 23nC @ 10V 23nC @ 10V 23nC @ 10V
Vgs (maximum value) ±30V ±30V ±30V
Input capacitance (Ciss) at different Vds (maximum value) 1063pF @ 25V 1063pF @ 25V 1063pF @ 25V
Power dissipation (maximum) 120W(Tc) 120W(Tc) 120W(Tc)
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type surface mount Through hole Through hole
Supplier device packaging D-Pak I-PAK I-PAK
Package/casing TO-252-3, DPak (2 leads + tab), SC-63 TO-251-3 short lead, IPak, TO-251AA TO-251-3 short lead, IPak, TO-251AA
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