GP2M008A060CG
GP2M008A060PG(H)
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
Improved ESD performance
D-PAK
I-PAK
N-channel MOSFET
BV
DSS
600V
I
D
7.5A
R
DS(on)
<1.2W
Device
GP2M008A060CG/GP2M008A060PG
GP2M008A060PGH
Package
D-PAK/I-PAK
I-PAK
Marking
GP2M008A060CG/GP2M008A060PG
GP2M008A060PGH
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation
Peak Diode Recovery dv/dt
(Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
V
DSS
V
GS
T
C
= 25
℃
T
C
= 100
℃
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25
℃
Derate above 25
℃
P
D
dv/dt
T
J
, T
STG
T
L
Value
600
±30
7.5
4.12
30
223
7.5
12
120
0.96
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
October 2012 : Rev0
Symbol
R
qJC
R
qJA
Value
1.04
110
Unit
℃/W
℃/W
1/6
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GP2M008A060CG
GP2M008A060PG(H)
Electrical Characteristics :
T
C
=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min
Typ
Max
Units
OFF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Forward Gate-Source Leakage Current
Reverse Gate-Source Leakage Current
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, T
C
= 125
°
C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
600
--
--
--
--
--
--
--
--
--
--
1
10
100
-100
V
µA
µA
µA
µA
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
(Note 4)
V
GS(th)
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 3.75 A
V
DS
= 30 V, I
D
= 3.75 A
3
--
--
--
1.0
9
5
1.2
--
V
W
S
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
1063
105
13
--
--
--
pF
pF
pF
SWITCHING
Turn-On Delay Time
(Note 4,5)
Turn-On Rise Time
(Note 4,5)
Turn-Off Delay Time
(Note 4,5)
Turn-Off Fall Time
(Note 4,5)
Total Gate Charge
(Note 4,5)
Gate-Source Charge
(Note 4,5)
Gate-Drain Charge
(Note 4,5)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
= 480V, I
D
= 7.5 A,
V
GS
= 10 V
V
DD
= 300 V, I
D
= 7.5 A,
R
G
= 25 Ω
--
--
--
--
--
--
--
27
33
85
25
23
5
10
--
--
--
--
--
--
--
ns
ns
ns
ns
nC
nC
nC
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
(Note 4)
Reverse Recovery Charge
(Note 4)
I
S
I
SM
V
SD
t
rr
Q
rr
----
----
V
GS
= 0 V, I
S
= 7.5 A
V
GS
= 0 V, I
S
= 7.5 A
dI
F
/ dt = 100 A/µs
--
--
--
--
--
--
--
--
352
2.6
7.5
30
1.5
--
--
A
A
V
ns
µC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=7.29mH, I
AS
= 7.5A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
℃
3 I
SD
≤ 7.5A, di/dt ≤ 200A/µs , V
DD
≤ BV
DS
, Starting T
J
= 25
℃
4. Pulse Test :Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
October 2012 : Rev0
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GP2M008A060CG
GP2M008A060PG(H)
15
V
DS
= 30V
Top V
GS
=15.0V
250 μs Pulse Test
12
Drain Current, I
D
[A]
Drain Current, I
D
[A]
9
Bottom
10.0V
9.0V
8.0V
7.0V
6.0V
5.5V
10
150
℃
25
1
℃
-55
℃
6
3
1. T
C
= 25
℃
2. 250μs Pulse Test
0
0
5
10
15
20
0.1
2
4
6
8
10
Drain-Source Voltage, V
DS
[V]
Gate-Source Voltage, V
GS
[V]
2.0
30
T
J
= 25
V
GS
= 0V
℃
Reverse Drain Current, I
DR
[A]
250μs Pulse Test
25
Drain-Source On-Resistance
R
DS(ON)
[Ω]
1.5
20
150
15
25
V
GS
= 10V
℃
℃
V
GS
= 20V
1.0
10
5
0.5
0
3
6
9
12
15
0
0.0
0.5
1.0
1.5
2.0
Drain Current,I
D
[A]
Source-Drain Voltage, V
SD
[V]
2000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
12
I
D
= 7.5A
10
V
DS
= 300V
1500
V
GS
= 0 V
Gate-Source Voltage, V
GS
[V]
Capacitance [pF]
C
iss
f = 1 MHz
8
V
DS
= 120V
1000
6
C
oss
V
DS
= 480V
4
500
C
rss
2
0
-1
10
0
10
0
10
1
0
5
10
15
20
25
30
Drain-Source Voltage, V
DS
[V]
Total Gate Charge, Q
G
[nC]
October 2012 : Rev0
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3/6
GP2M008A060CG
GP2M008A060PG(H)
1.20
3.0
V
GS
= 0 V
V
GS
= 10 V
Drain-Source Breakdown Voltage
BV
DSS
, (Normalized)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-80
-40
0
40
80
o
120
160
Drain-Source On-Resistance
R
DS(ON)
, (Normalized)
I
D
= 250 μA
2.5
I
D
= 3.75 A
2.0
1.5
1.0
0.5
0.0
-80
-40
0
40
80
o
120
160
Junction Temperature,T
J
[ C]
Junction Temperature, T
J
[ C]
8
1.5
Gate Threshold Voltage
V
TH
, (Normalized)
6
Drain Current, I
D
[A]
1.0
4
0.5
2
V
DS
= V
GS
I
D
= 250
A
0
25
50
75
100
℃
125
150
0.0
-80
-40
0
40
80
o
120
160
Case Temperature, T
C
[
]
Junction Temperature, T
J
[ C]
10
2
Operation in This Area
is Limited by R
DS(on)
10 us
100 us
Transient thermal impedance
Z
thJC
(t)
10
0
Drain Current, I
D
[A]
Duty=0.5
0.2
0.1
10
-1
10
1
1 ms
10 ms
100 ms
10
0
DC
0.05
0.02
P
DM
t
T
0.01
-2
single pulse
10
-1
T
C
= 25 C
T
J
= 150 C
Single Pulse
o
o
Duty = t/T
Z
thJC
(t) = 1.04 /W Max.
℃
10
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
0
10
1
10
2
10
3
Pulse Width, t [sec]
Drain-Source Voltage, V
DS
[V]
October 2012 : Rev0
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GP2M008A060CG
GP2M008A060PG(H)
TO-252 (D-PAK) MECHANICAL DATA
October 2012 : Rev0
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