NVTFS5116PL
Power MOSFET
−60 V, −14 A, 52 mW, Single P−Channel
Features
•
•
•
•
•
•
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS5116PLWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
−60 V
R
DS(on)
MAX
52 mW @ −10 V
−14 A
72 mW @ −4.5 V
Value
−60
±20
−14
−10
Unit
V
V
A
P−Channel MOSFET
D (5−8)
I
D
MAX
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3, 4)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1 &
3, 4)
Power Dissipation
R
qJA
(Notes 1, 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
21
10
−6
−4
3.2
1.6
−126
−55 to
+175
−17
45
W
G (4)
S (1,2,3)
A
MARKING DIAGRAM
W
1
1
A
°C
A
mJ
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 30 A, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
T
L
260
°C
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
Junction−to−Ambient − Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
7.2
47
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 3
Publication Order Number:
NVTFS5116PL/D
NVTFS5116PL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
(BR)DSS
I
DSS
V
GS
= 0 V, I
D
= 250
mA
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
−60
−1.0
−10
"100
nA
V
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Drain−to−Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
"20
V
V
GS(TH)
R
DS(on)
V
GS
= V
DS
, I
D
= −250
mA
V
GS
= −10 V, I
D
= −7 A
V
GS
= −4.5 V, I
D
= −7 A
−1
37
51
11
−3
52
72
V
mW
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
g
FS
V
DS
= 15 V, I
D
= −5 A
S
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −25 V
1258
127
84
14
pF
nC
nC
V
GS
= −4.5 V, V
DS
= −48 V,
I
D
= −7 A
1
4
8
V
GS
= −10 V, V
DS
= −48 V,
I
D
= −7 A
25
nC
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
GS
= −4.5 V, V
DS
= −48 V,
I
D
= −7 A
14
68
24
36
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= −7 A
T
J
= 25°C
T
J
= 125°C
−0.79
−0.64
21
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= −7 A
16
5
24
nC
ns
−1.20
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS5116PL
TYPICAL CHARACTERISTICS
50
T
J
= 25°C
−I
D
, DRAIN CURRENT (A)
40
−10 V
30
−4 V
20
−3.7 V
−3.4 V
−3.1 V
−2.8 V
0
1
2
3
4
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
V
GS
= −7 V
−5.0 V
−4.6 V
−4.3 V
−I
D
, DRAIN CURRENT (A)
30
40
V
DS
≥
−10 V
20
T
J
= 25°C
10
T
J
= 125°C
0
2
3
4
5
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
T
J
= −55°C
10
0
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.075
I
D
= −7 A
T
J
= 25°C
0.065
0.080
Figure 2. Transfer Characteristics
0.070
V
GS
= −4.5 V
0.060
0.055
0.050
V
GS
= −10 V
0.045
0.040
0.035
3
4
5
6
7
8
9
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0.030
5
10
15
20
25
30
35
40
−I
D
, DRAIN CURRENT (A)
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.2
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
150
175
100
I
D
= −7 A
V
GS
= −10 V
−I
DSS
, LEAKAGE (nA)
10000
100000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
10
20
30
40
50
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
60
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVTFS5116PL
TYPICAL CHARACTERISTICS
1800
1600
C, CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
C
rss
0
10
20
30
40
50
60
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
oss
C
iss
V
GS
= 0 V
T
J
= 25°C
−V
GS
, GATE−TO−SOURCE VOLTAGE
(V)
10
Q
T
8
6
Q
gs
Q
gd
4
2
V
DS
= −48 V
I
D
= −7 A
T
J
= 25°C
0
5
10
15
20
25
0
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
−I
S
, SOURCE CURRENT (A)
V
DD
= −48 V
I
D
= −7 A
V
GS
= −4.5 V
100
t, TIME (ns)
t
f
t
r
40
Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
GS
= 0 V
T
J
= 25°C
30
t
d(off)
10
t
d(on)
20
10
1.0
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.5
0.6
0.7
0.8
0.9
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
V
GS
= −10 V
Single Pulse
T
C
= 25°C
10
ms
45
I
D
= −30 A
−I
D
, DRAIN CURRENT (A)
100
100
ms
1 ms
30
10
10 ms
15
1
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
0.1
1
10
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
dc
0
25
50
75
100
125
150
T
J
, STARTING JUNCTION TEMPERATURE (°C)
175
100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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NVTFS5116PL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
10
R
qJA(t)
(°C/W)
0.2
0.1
0.05
0.02
0.01
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Device
NVTFS5116PLTAG
NVTFS5116PLWFTAG
NVTFS5116PLTWG
NVTFS5116PLWFTWG
Marking
5116
16LW
5116
16LW
Package
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
WDFN8
(Pb−Free)
Shipping
†
1500 / Tape & Reel
1500 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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