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NVTFS5116PLWFTAG

Description
MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH
CategoryDiscrete semiconductor    The transistor   
File Size78KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NVTFS5116PLWFTAG Overview

MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH

NVTFS5116PLWFTAG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerON Semiconductor
Contacts8
Manufacturer packaging code511AB
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time18 weeks
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)14 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Maximum operating temperature175 °C
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)21 W
surface mountYES
Terminal surfaceTin (Sn)
Base Number Matches1
NVTFS5116PL
Power MOSFET
−60 V, −14 A, 52 mW, Single P−Channel
Features
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFS5116PLWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V
(BR)DSS
−60 V
R
DS(on)
MAX
52 mW @ −10 V
−14 A
72 mW @ −4.5 V
Value
−60
±20
−14
−10
Unit
V
V
A
P−Channel MOSFET
D (5−8)
I
D
MAX
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3, 4)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1 &
3, 4)
Power Dissipation
R
qJA
(Notes 1, 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
21
10
−6
−4
3.2
1.6
−126
−55 to
+175
−17
45
W
G (4)
S (1,2,3)
A
MARKING DIAGRAM
W
1
1
A
°C
A
mJ
WDFN8
(m8FL)
CASE 511AB
XXXX
A
Y
WW
G
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 30 A, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
T
L
260
°C
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
Junction−to−Ambient − Steady State (Note 3)
Symbol
R
YJ−mb
R
qJA
Value
7.2
47
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
©
Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 3
Publication Order Number:
NVTFS5116PL/D

NVTFS5116PLWFTAG Related Products

NVTFS5116PLWFTAG NVTFS5116PLTWG
Description MOSFET Pwr MOSFET 60V 14A 52mOhm SGL P-CH MOSFET Single P-Channel 60V,14A,52mohm
Brand Name ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker ON Semiconductor ON Semiconductor
Contacts 8 8
Manufacturer packaging code 511AB 511AB
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Factory Lead Time 18 weeks 6 weeks
Is Samacsys N N
Configuration Single SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID) 14 A 14 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Maximum operating temperature 175 °C 175 °C
Polarity/channel type P-CHANNEL P-CHANNEL
Maximum power dissipation(Abs) 21 W 3.2 W
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Base Number Matches 1 1
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