BLF6G38LS-100,112 datasheet, PDF

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BLF6G38LS-100,112: DescriptionRF MOSFET Transistors LDMOS TNS; CategoryDiscrete semiconductor The transistor; File Size1MB，13 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BLF6G38LS-100,112 Overview

RF MOSFET Transistors LDMOS TNS

BLF6G38LS-100,112 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconductor
Is it Rohs certified?	conform to
Parts packaging code	SOT
package instruction	ROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts	2
Manufacturer packaging code	SOT502B
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	65 V
Maximum drain current (Abs) (ID)	34 A
Maximum drain current (ID)	34 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-CDFP-F2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLATPACK
Peak Reflow Temperature (Celsius)	245
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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BLF6G38-100; BLF6G38LS-100

WiMAX power LDMOS transistor

Rev. 3 — 1 September 2015

Product data sheet

1. Product profile

1.1 General description

100 W LDMOS power transistor for base station applications at frequencies from

3400 MHz to 3600 MHz.

Table 1.

Typical performance

Typical RF performance at T

case

= 25



C in a class-AB production test circuit.

Mode of operation

1-carrier N-CDMA

[2]

[1]

[2]

[3]

(MHz)

L(AV)

L(M)

[1]

(V)

(W)

18.5

(W)

130



ACPR

885k

ACPR

1980k

(dBc)

65

[3]

(dB) (%)

3400 to 3600 28

21.5

47.5

[3]

L(M)

stands for peak output power.

Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.

Measured within 30 kHz bandwidth.

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits



Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,

sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability

on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz

and 3600 MHz, a supply voltage of 28 V and an I

of 1050 mA:



Qualified up to a maximum V

operation of 32 V



Integrated ESD protection



Excellent ruggedness



High efficiency



Excellent thermal stability



Designed for broadband operation



Internally matched for ease of use



Low gold plating thickness on leads



Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

BLF6G38LS-100,112 Related Products

	BLF6G38LS-100,112	BLF6G38-100,112
Description	RF MOSFET Transistors LDMOS TNS	RF MOSFET Transistors Trans MOSFET N-CH 65V 34A 3-Pin
Brand Name	NXP Semiconductor	NXP Semiconductor
Is it Rohs certified?	conform to	conform to
Parts packaging code	SOT	SOT
Contacts	2	2
Manufacturer packaging code	SOT502B	SOT502A
Reach Compliance Code	compliant	compliant
Base Number Matches	1	1

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