BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from
3400 MHz to 3600 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a class-AB production test circuit.
Mode of operation
1-carrier N-CDMA
[2]
[1]
[2]
[3]
f
(MHz)
V
DS
P
L(AV)
P
L(M)
[1]
G
p
(V)
(W)
18.5
(W)
130
13
D
ACPR
885k
ACPR
1980k
(dBc)
(dBc)
65
[3]
(dB) (%)
3400 to 3600 28
21.5
47.5
[3]
P
L(M)
stands for peak output power.
Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.23 MHz.
Measured within 30 kHz bandwidth.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability
on the CCDF. Channel bandwidth is 1.23 MHz) at a frequency of 3400 MHz, 3500 MHz
and 3600 MHz, a supply voltage of 28 V and an I
Dq
of 1050 mA:
Qualified up to a maximum V
DS
operation of 32 V
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
1.3 Applications
RF power amplifiers for base stations and multicarrier applications in the 3400 MHz to
3600 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF6G38-100 (SOT502A)
1
1
3
2
2
3
sym112
BLF6G38LS-100 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G38-100
BLF6G38LS-100
-
-
Description
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
0.5
-
65
-
Max
65
+13
34
+150
200
Unit
V
V
A
C
C
BLF6G38-100_6G38LS-100#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
2 of 13
BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
Type
BLF6G38LS-100
Typ
0.58
0.43
Unit
K/W
K/W
T
case
= 80
C;
P
L(AV)
= 18.5 W BLF6G38-100
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C per section; unless otherwise specified.
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
Parameter
drain-source breakdown voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.6 mA
V
DS
= 10 V; I
D
= 180 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V; V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 6.3 A
V
GS
= V
GS(th)
+ 3.75 V; I
D
= 6.3 A
V
GS
=0 V; V
DS
= 28 V; f = 1 MHz
Min
65
1.4
-
26.5
-
-
-
-
Typ
-
2
-
33
-
12
0.09
2.6
Max
-
2.4
5
-
450
-
0.15
-
Unit
V
V
A
A
nA
S
pF
7. Application information
Table 7.
Application information
Mode of operation: 1-carrier N-CDMA; Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes
8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF; Channel bandwidth is 1.23 MHz; f
1
= 3400 MHz; f
2
= 3500 MHz;
f
3
= 3600 MHz; RF performance at V
DS
= 28 V; I
Dq
= 1050 mA; T
case
= 25
C; unless otherwise specified, in a class-AB
production circuit.
Symbol
P
L(M)
G
p
RL
in
D
ACPR
885k
ACPR
1980k
Parameter
peak output power
power gain
input return loss
drain efficiency
adjacent channel power ratio (885 kHz)
adjacent channel power ratio (1980 kHz)
[1]
Measured within 30 kHz bandwidth.
Conditions
P
L(AV)
= 18.5 W
P
L(AV)
= 18.5 W
P
L(AV)
= 18.5 W
P
L(AV)
= 18.5 W
P
L(AV)
= 18.5 W
P
L(AV)
= 18.5 W
[1]
[1]
Min
110
11.5
-
18.5
-
-
Typ
130
13
10
21.5
47.5
65
Max
-
-
-
-
45
63
Unit
W
dB
dB
%
dBc
dBc
7.1 Ruggedness in class-AB operation
The BLF6G38-100 and BLF6G38LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 1050 mA; P
L
= P
L(1dB)
; f = 3600 MHz.
BLF6G38-100_6G38LS-100#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
3 of 13
BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
7.2 Ampleon WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = T
g
/ T
b
= 1 / 8;
FFT = 1024; zone type = PUSC;
= 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol
30 subchannels; P
L
= P
L(nom)
+ 3.86 dB.
Table 8.
Zone 0
Zone 0
Zone 0
Frame structure
Modulation technique
QPSK 1/2
64 QAM 3/4
64 QAM 3/4
Data length
3 bit
692 bit
10000 bit
FCH
data
data
2 symbols
4 subchannels
2 symbols
26 subchannels
44 symbols
30 subchannels
Frame contents
7.2.2 Graphs
001aaj033
001aaj034
10
EVM
(%)
8
18
G
P
(dB)
16
40
η
D
(%)
30
6
14
4
G
P
12
2
η
D
10
10
−1
0
10
2
P
L(AV)
(W)
10
20
0
10
−1
1
10
P
L
(W)
10
2
1
10
V
DS
= 28 V; I
Dq
= 1050 mA; f = 3500 MHz.
V
DS
= 28 V; I
Dq
= 1050 mA; f = 3500 MHz.
Fig 1.
EVM as a function of load power;
typical values
Fig 2.
Power gain and drain efficiency as function of
average load power; typical values
BLF6G38-100_6G38LS-100#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
4 of 13
BLF6G38-100; BLF6G38LS-100
WiMAX power LDMOS transistor
−25
ACPR
(dBc)
−35
001aaj036
ACPR
10M
−45
ACPR
20M
−55
ACPR
30M
−65
10
−1
1
10
P
L(AV)
(W)
10
2
V
DS
= 28 V; I
Dq
= 1050 mA; f = 3500 MHz.
Fig 3.
Adjacent channel power ratio as a function of average load power; typical values
7.3 Single carrier NA IS-95 broadband performance at 2 W average
7.3.1 Graphs
001aaj037
001aaj039
16
G
P
(dB)
14
G
P
12
25
η
D
(%)
24
−40
ACPR
(dBc)
−50
ACPR
885k
(1)
(2)
23
10
η
D
8
22
−60
21
ACPR
1500k
(1)
(2)
ACPR
1980k
(2)
(1)
6
3400
3450
3500
3550
f (MHz)
20
3600
−70
3400
3440
3480
3520
3560
3600
f (MHz)
V
DS
= 28 V; I
Dq
= 1050 mA; Single Carrier IS-95;
PAR = 9.7 dB at 0.01 % probability.
V
DS
= 28 V; I
Dq
= 1050 mA; single carrier IS-95;
PAR = 9.7 dB at 0.01 % probability.
(1) Low frequency component
(2) High frequency component
Fig 4.
Power gain and drain efficiency as function of
frequency; typical values
Fig 5.
Adjacent channel power ratio as a function of
frequency; typical values
BLF6G38-100_6G38LS-100#3
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 1 September 2015
5 of 13
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