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HER108G

Description
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size47KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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HER108G Overview

1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41

HER108G Parametric

Parameter NameAttribute value
MakerWon-Top Electronics Co., Ltd.
Parts packaging codeDO-41
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILTY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse recovery time0.075 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
WTE
POWER SEMICONDUCTORS
HER101G – HER108G
Pb
1.0A GLASS PASSIVATED ULTRAFAST DIODE
Features
!
!
!
!
!
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
!
!
!
!
!
!
!
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
DO-41
Dim
Min
Max
25.4
A
4.06
5.21
B
0.71
0.864
C
2.00
2.72
D
All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HER
101G
50
35
HER
102G
100
70
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
Storage Temperature Range
@I
F
= 1.0A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
HER
103G
200
140
HER
104G
300
210
HER
105G
400
280
HER
106G
600
420
HER
107G
800
560
HER
108G
1000
700
Unit
V
V
A
1.0
I
FSM
V
FM
I
RM
t
rr
C
j
T
j
T
STG
50
20
1.0
30
1.3
5.0
100
75
15
-65 to +150
-65 to +150
1.7
A
V
µA
nS
pF
°C
°C
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
HER101G – HER108G
1 of 4
© 2006 Won-Top Electronics
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