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BR215F

Description
Schottky diodes
CategoryDiscrete semiconductor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BR215F Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: BR215F


parameter:


Repetitive reverse voltage peak Vrrm: 150V


Maximum average rectified current Io: 2A


Maximum forward surge current I FSM: 50A


Forward voltage drop VF: 0.9V when IF=2A


Maximum feedback current IR: 50uA when VR=150V


Package: SMAF


BR215F Preview

Download Datasheet
BR28F SERIES
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• For surface mounted applications
• Low profile package
• Built-in strain relief
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling, and
polarity protection applications
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
80-150Volts
CURRENT
2 Amperes
MECHANICAL DATA
• Case: SMAF molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.0012 ounces, 0.0328 grams
• Polarity : Color band denotes cathode end
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25
o
C unless otherwise noted)
PAR AME T E R
Re curre nt P e a k Re ve rs e Vo lta g e
RM S Vo lta g e
D C B lo c ki ng Vo lta g e
A ve ra g e F o rwa rd C ur re nt
P e a k F o rwa rd S urg e C urre nt : 8 .3 ms s i ng le ha lf si ne -wa ve
s up e ri mp o se d o n r a te d lo a d (JE D E C me tho d )
F o rwa r d Vo lta g e a t 2 .0 A
D C Re ve rse C urre nt a t Ra te d D C B lo ck i ng Vo lta g e
Typ i c a l Junc ti o n C a p a ci ta nc e ( V R= 4 V, f=1 M Hz)
Typ i c a l The rm a l Re s i s ta nc e ,J uncti o n to L e a d (No te 1 )
J uncti o n to A m b i e nt (No te 1 )
Op e ra ti ng Junc ti o n Te m p e r a ture a nd S to ra g e Te mp e ra tur e Ra ng e
NOTES :
1. Mounted on 48c m
2
S YMB OL
V
R RM
V
RMS
V
R
I
F (AV )
I
F S M
V
F
I
R
C
J
R
JL
R
JA
T
J
,T
S T G
BR 28F
80
56
80
B R2 9F
90
63
90
2
B R2 10F
1 00
70
1 00
B R2 15F
1 50
1 05
1 50
U N IT S
V
V
V
A
A
50
0 .8
0 .0 5
75
20
83
-6 5 to +1 5 0
60
O
0 .9
V
mA
pF
C / W
O
C
FR-4 P CB .
March 13,2012-REV.00
PAGE . 1
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