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D1800N36T

Description
Rectifiers RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size238KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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Rectifiers RECTIFIER DIODE

D1800N36T Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current27500 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature160 °C
Maximum output current1800 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Maximum repetitive peak reverse voltage3600 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Base Number Matches1
N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
D1800N
T
vj
= -40°C... T
vj max
V
RRM
3600
4000
4200
4400
4600
4800
3850
V
V
V
A
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
Kenndaten
repetitive peak reverse voltages
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
500 A
i
F
9000 A
on-state characteristic
Elektrische Eigenschaften
T
C
= 100 °C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
I
FRMSM
I
FAVM
I
FAVM
I
FRMS
T
vj
=25 °C, t
P
= 10 ms
T
vj
= T
vj max,
t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
FSM
I²t
1800 A
2550 A
4000 A
35000 A
27500 A
6125 10³A²s
3781 10³A²s
T
vj
= T
vj max
, i
F
= 7,4 kA
T
vj
= T
vj max
, i
F
= 1,5 kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
F
max.
max.
2,82 V
1,32 V
0,85 V
0,253 mΩ
V
(TO)
r
T
A=
B=
C=
D=
i
R
v
F
=
A
+
B
i
F
+
C
ln ( i
F
+
1 )
+
D
Sperrstrom
reverse current
Thermische Eigenschaften
T =T
,v =V
vj
vj max
R
RRM
i
F
-7,537E-01
3,748E-04
3,443E-01
-2,660E-02
max.
100 mA
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Kühlfläche / cooling surface
beidseitig / two-sided,
θ
= 180°sin
beidseitig / two-sided, DC
Anode / anode,
θ
= 180°sin
Anode / anode, DC
Kathode / cathode,
θ
= 180°sin
Kathode / cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sided
einseitig / single-sided
R
thJC
max.
max.
max.
max.
max.
max.
max.
max.
0,0169
0,0160
0,0329
0,0320
0,0329
0,0320
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
R
thCH
0,0025 °C/W
0,0050 °C/W
160 °C
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
T
vj max
T
c op
T
stg
-40...+160 °C
-40...+160 °C
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2008-09-15
3.0
IFBIP D AEC / 2008-09-15, H.Sandmann
A 41/08
Seite/page
1/8

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D1800N36T D1800N48T
Description Rectifiers RECTIFIER DIODE Rectifiers 4.8KV 2.452KA
Reach Compliance Code compliant compliant
application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 27500 A 27500 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 160 °C 160 °C
Maximum output current 1800 A 1800 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND
Package form DISK BUTTON DISK BUTTON
Maximum repetitive peak reverse voltage 3600 V 4800 V
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location END END
Base Number Matches 1 1
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