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SF52G

Description
Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size553KB,4 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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SF52G Overview

Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN

SF52G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionDO-27, 2 PIN
Reach Compliance Codeunknown
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
Maximum reverse recovery time0.035 µs
surface mountNO
Terminal surfaceTin (Sn)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED

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Download Datasheet
SF51G THRU SF58G
Super Fast Recovery Rectifier
Features
● Ultrafast reverse recovery time
● Low leakage current
● Low switching losses, high efficiency
● High forward surge capability
● Glass passivated chip junction
● Solder dip 275 ° max. 7 s, per JESD 22-B106
C
RoHS
COMPLIANT
Typical Applications
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters
for consumer, computer and telecommunication.
Mechanical Data
Package:
DO-201AD(DO-27)
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals:
Tin plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity:
Color band denotes the cathode end
■Maximum Ratings
(Ta=25℃ Unless otherwise specified)
PARAMETER
Device marking code
Repetitive Peak Reverse Voltage
Average Forward Current
@60Hz sine wave, Resistance load, Ta =60℃
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Ta=25℃
Storage Temperature
Junction Temperature
V
RRM
I
F(AV)
V
A
SYMBOL
UNIT
SF51G
SF51G
50
SF52G
SF52G
100
SF53G
SF53G
150
SF54G
SF54G
200
5.0
SF55G
SF55G
300
SF56G
SF56G
400
SF57G
SF57G
500
SF58G
SF58G
600
I
FSM
Tstg
Tj
A
150
-55 ~+150
-55~+150
■Electrical
Characteristics
(T
a
=25℃ Unless otherwise specified)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse current
at rated DC blocking voltage
per diode
SYMBOL
VF
UNIT
V
TEST CONDITIONS
IFM=5.0A
Ta=25℃
IR
μA
Ta=100℃
t
rr
ns
I
F
=0.5A I
R
=1A
I
RR
=0.25A
Measured at 1MHZ
and Applied Reverse
Voltage of 4.0 V.D.C.
150
35
SF51G
SF52G
SF53G
SF54G
SF55G
SF56G
SF57G
SF58G
0.95
5
1.3
1.7
Reverse Recovery time
Typical junction capacitance
Cj
pF
60
40
1/4
S-A159
Rev.2.1, 28-Apr-14
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com

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