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SI4862DY

Description
MOSFET 16V 25A 3.5W
CategoryDiscrete semiconductor    The transistor   
File Size159KB,7 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SI4862DY Overview

MOSFET 16V 25A 3.5W

SI4862DY Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Objectid104555174
package instruction,
Reach Compliance Codecompliant
compound_id178173647
ConfigurationSingle
Maximum drain current (Abs) (ID)17 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)3.5 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Si4862DY
Vishay Siliconix
N-Channel 16-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
16
R
DS(on)
(Ω)
0.0033 at V
GS
= 4.5 V
0.0055 at V
GS
= 2.5 V
I
D
(A)
25
20
FEATURES
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFETs: 2.5 V Rated
• Low 3.3 mΩ R
DS(on)
• Low Gate Resistance
• 100 % R
g
Tested
APPLICATIONS
• Synchronous Rectification
• Low Output Voltage Synchronous Rectification
D
SO-8
S
S
S
G
1
2
3
4
Top View
Ordering Information:
Si4862DY-T1-E3 (Lead (Pb)-free)
Si4862DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
2.9
3.5
2.2
- 55 to 150
25
20
60
1.3
1.6
1
W
°C
10 s
16
±8
17
13
A
Steady State
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t
10 s
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
29
67
13
Maximum
35
80
16
°C/W
Unit
Document Number: 71439
S09-0221-Rev. C, 09-Feb-09
www.vishay.com
1

SI4862DY Related Products

SI4862DY SI4862DY-T1-GE3
Description MOSFET 16V 25A 3.5W MOSFET 16V 25A 3.5W 3.3mohm @ 4.5V
Is it Rohs certified? incompatible conform to
Maker Vishay Vishay
Reach Compliance Code compliant unknown
Configuration Single SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID) 17 A 17 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0 e3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 3.5 W 3.5 W
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn)
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