2SA1931,SINFQ(J datasheet, PDF

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2SA1931,SINFQ(J: DescriptionTRANS PNP 5A 50V TO220-3; Categorysemiconductor Discrete semiconductor; File Size146KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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2SA1931,SINFQ(J Overview

TRANS PNP 5A 50V TO220-3

2SA1931,SINFQ(J Parametric

Parameter Name	Attribute value
Transistor type	PNP
Current - Collector (Ic) (Maximum)	5A
Voltage - collector-emitter breakdown (maximum)	50V
Vce saturation value (maximum value) when different Ib,Ic	400mV @ 200mA，2A
Current - collector cutoff (maximum)	1µA（ICBO）
DC current gain (hFE) at different Ic, Vce (minimum value)	100 @ 1A，1V
Power - Max	2W
Frequency - Transition	60MHz
Operating temperature	150°C（TJ）
Installation type	Through hole
Package/casing	TO-220-3 whole package
Supplier device packaging	TO-220NIS

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2SA1931

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT PROCESS)

2SA1931

High-Current Switching Applications

Unit: mm

•

Low saturation voltage: V

CE (sat)

−0.4

V (max)

High-speed switching time: t

stg

= 1.0

μs

(typ.)

Complementary to 2SC4881

Absolute Maximum Ratings

(Tc = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power

dissipation

Junction temperature

Storage temperature range

Ta = 25°C

Tc = 25°C

Symbol

CBO

CEO

EBO

stg

Rating

−60

−50

−7

−5

−1

2.0

150

−55

to 150

Unit

°C

JEDEC

JEITA

―

SC-67

TOSHIBA

2-10R1A

Note: Using continuously under heavy loads (e.g. the application of high

Weight: 1.7 g (typ.)

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-13

2SA1931

RESTRICTIONS ON PRODUCT USE

•

The information contained herein is subject to change without notice.

20070701-EN

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical

stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of

safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of

such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as

set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and

conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability

Handbook” etc.

•

The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,

etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires

extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or

bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or

spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his

document shall be made at the customer’s own risk.

•

The products described in this document shall not be used or embedded to any downstream products of which

manufacture, use and/or sale are prohibited under any applicable laws and regulations.

•

The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which

may result from its use. No license is granted by implication or otherwise under any patents or other rights of

TOSHIBA or the third parties.

•

Please contact your sales representative for product-by-product details in this document regarding RoHS

compatibility. Please use these products in this document in compliance with all applicable laws and regulations

that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses

occurring as a result of noncompliance with applicable laws and regulations.

2006-11-13

2SA1931,SINFQ(J Related Products

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Description	TRANS PNP 5A 50V TO220-3	TRANS PNP 5A 50V TO220-3	TRANS PNP 5A 50V TO220-3	TRANS PNP 5A 50V TO220-3	TRANS PNP 5A 50V TO220-3	TRANS PNP 5A 50V TO220-3	TRANS PNP 5A 50V TO220-3	TRANS PNP 5A 50V TO220-3	TRANS PNP 5A 50V TO220-3
Transistor type	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Current - Collector (Ic) (Maximum)	5A	5A	5A	5A	5A	5A	5A	5A	5A
Voltage - collector-emitter breakdown (maximum)	50V	50V	50V	50V	50V	50V	50V	50V	50V
Vce saturation value (maximum value) when different Ib,Ic	400mV @ 200mA，2A	400mV @ 200mA，2A	400mV @ 200mA，2A	400mV @ 200mA，2A	400mV @ 200mA，2A	400mV @ 200mA，2A	400mV @ 200mA，2A	400mV @ 200mA，2A	400mV @ 200mA，2A
Current - collector cutoff (maximum)	1µA（ICBO）	1µA（ICBO）	1µA（ICBO）	1µA（ICBO）	1µA（ICBO）	1µA（ICBO）	1µA（ICBO）	1µA（ICBO）	1µA（ICBO）
DC current gain (hFE) at different Ic, Vce (minimum value)	100 @ 1A，1V	100 @ 1A，1V	100 @ 1A，1V	100 @ 1A，1V	100 @ 1A，1V	100 @ 1A，1V	100 @ 1A，1V	100 @ 1A，1V	100 @ 1A，1V
Power - Max	2W	2W	2W	2W	2W	2W	2W	2W	2W
Frequency - Transition	60MHz	60MHz	60MHz	60MHz	60MHz	60MHz	60MHz	60MHz	60MHz
Operating temperature	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）	150°C（TJ）
Installation type	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole	Through hole
Package/casing	TO-220-3 whole package	TO-220-3 whole package	TO-220-3 whole package	TO-220-3 whole package	TO-220-3 whole package	TO-220-3 whole package	TO-220-3 whole package	TO-220-3 whole package	TO-220-3 whole package
Supplier device packaging	TO-220NIS	TO-220NIS	TO-220NIS	TO-220NIS	TO-220NIS	TO-220NIS	TO-220NIS	TO-220NIS	TO-220NIS

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