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STTH60R04

Description
60 A, 400 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size89KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

STTH60R04 Overview

60 A, 400 V, SILICON, RECTIFIER DIODE

STTH60R04 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC, DO-247, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationULTRA FAST RECOVERY
Phase1
Maximum reverse recovery time0.0550 us
Maximum repetitive peak reverse voltage400 V
Maximum average forward current60 A
Maximum non-repetitive peak forward current650 A
STTH60R04
Ultrafast recovery diode
Main product characteristics
I
F(AV)
V
RRM
T
j
V
F
(typ)
t
rr (typ)
60 A
400 V
175° C
0.95 V
31 ns
A
K
Features and benefits
Very low switching losses
High frequency and/or high pulsed current
operation
High junction temperature
K
A
DO-247
STTH60R04W
Description
The STTH60R04 series uses ST's new 400 V
planar Pt doping technology. The STTH60R04 is
specially suited for switching mode base drive and
transistor circuits.
Available in a through-the-hole package, this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Table 1.
Symbol
V
RRM
V
RSM
I
F(RMS)
I
F(AV)
I
FRM
I
FSM
T
stg
T
j
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Average forward current,
δ
= 0.5
Repetitive peak forward current
t
p
= 5 µs F = 1 kHz square
T
c
= 110° C
Order codes
Part Number
STTH60R04W
Marking
STTH60R04W
Absolute ratings (limiting values at 25° C, unless otherwise specified)
Parameter
Value
400
400
100
60
375
650
-65 to +175
-40 to +175
Unit
V
V
A
A
A
A
°C
°C
Surge non repetitive forward current t
p
= 10 ms Sinusoidal
Storage temperature range
Operating junction temperature range
March 2007
Rev 1
1/7
www.st.com
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