EEWORLDEEWORLDEEWORLD

Part Number

Search

SI4435DYTRPBF

Description
MOSFET HEXFET P-CH Low 0.020 Ohm -30V
CategoryDiscrete semiconductor    The transistor   
File Size105KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

SI4435DYTRPBF Online Shopping

Suppliers Part Number Price MOQ In stock  
SI4435DYTRPBF - - View Buy Now

SI4435DYTRPBF Overview

MOSFET HEXFET P-CH Low 0.020 Ohm -30V

SI4435DYTRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-G8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Other featuresULTRA LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.02 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeMS-012AA
JESD-30 codeR-PDSO-G8
Humidity sensitivity level1
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeP-CHANNEL
Maximum pulsed drain current (IDM)50 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
PD- 95133
Si4435DYPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
S
1
8
A
D
D
D
D
S
S
G
2
7
V
DSS
= -30V
3
6
4
5
R
DS(on)
= 0.020Ω
Description
These P-channel HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current

Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-8.0
-6.4
-50
2.5
1.6
0.02
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
ƒ
Max.
50
Units
°C/W
www.irf.com
1
09/30/04

SI4435DYTRPBF Related Products

SI4435DYTRPBF SI4435DYPBF
Description MOSFET HEXFET P-CH Low 0.020 Ohm -30V MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC
Is it Rohs certified? conform to conform to
package instruction SMALL OUTLINE, R-PDSO-G8 LEAD FREE, SOP-8
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shanghai ACM32F070 development board evaluation 2, MDK programming environment
[i=s]This post was last edited by wenyangzeng on 2022-9-26 13:24[/i]Shanghai ACM32F070 development board evaluation 2, MDK programming environmentFirst, install Aisinochip.ACM32F0X0.1.0.1.pack in the ...
wenyangzeng Domestic Chip Exchange
TMS320C6000-CCS software development environment construction
CS project file composition===================================================== 1. Source files (*.c *.asm) 2. Header files (*.h *.inc) 3.There are 2 types of cmd files.One is used to allocate RAM sp...
灞波儿奔 Microcontroller MCU
[RVB2601 Creative Application Development] Simulating UART 2
[RVB2601 Creative Application Development] Simulating UART 1 https://en.eeworld.com/bbs/thread-1199753-1-1.html Continuing from the last article, I worked until 11pm yesterday and got up at 6am. Until...
lugl4313820 Domestic Chip Exchange
Tips to improve DC-DC dynamic characteristics
Power supply is an indispensable module for modern electronic products. Most general power supply chips now provide feedback pins as shown in the figure below, which makes it easy for customers to use...
木犯001号 Power technology
51 single chip microcomputer
How can I modify this program of 51 single chip microcomputer so that the function ends when the switch is pressed again? I am new to 51 single chip microcomputer and would like to ask for your advice...
生来不会 51mcu
[DWIN Serial Port Screen] Nucleic Acid Sampling Registration System 4 Query Data and Display
【DWIN Serial Port Screen】Nucleic Acid Sampling and Registration System 1 - Domestic Chip Exchange - Electronic Engineering World - Forum (eeworld.com.cn) [DWIN Serial Port Screen] Nucleic Acid Samplin...
lugl4313820 Domestic Chip Exchange

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号