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SI4435DYPBF

Description
MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC
CategoryDiscrete semiconductor    The transistor   
File Size105KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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SI4435DYPBF Overview

MOSFET 1 P-CH -30V HEXFET 20mOhms 40nC

SI4435DYPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionLEAD FREE, SOP-8
Reach Compliance Codecompliant
ECCN codeEAR99
PD- 95133
Si4435DYPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
S
1
8
A
D
D
D
D
S
S
G
2
7
V
DSS
= -30V
3
6
4
5
R
DS(on)
= 0.020Ω
Description
These P-channel HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance per
silicon area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J,
T
STG
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current

Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-30
-8.0
-6.4
-50
2.5
1.6
0.02
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
ƒ
Max.
50
Units
°C/W
www.irf.com
1
09/30/04

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