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MT3S14T

Description
VHF~UHF Band Low-Noise Amplifier Applications
CategoryDiscrete semiconductor    The transistor   
File Size146KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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MT3S14T Overview

VHF~UHF Band Low-Noise Amplifier Applications

MT3S14T Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionCOLLECTOR
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.75 pF
Collector-emitter maximum voltage2.5 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)11000 MHz

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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