KTC3600S datasheet, PDF - EEWORLD Datasheet

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KTC3600S: DescriptionEPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION; CategoryDiscrete semiconductor The transistor; File Size374KB，5 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTC3600S Overview

EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION

KTC3600S Parametric

Parameter Name	Attribute value
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.04 A
Collector-based maximum capacity	0.95 pF
Collector-emitter maximum voltage	10 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	10000 MHz
Base Number Matches	1

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SEMICONDUCTOR

TECHNICAL DATA

VHF/UHF WIDE BAND AMPLIFIER APPLICATION.

KTC3600S

EPITAXIAL PLANAR NPN TRANSISTOR

FEATURES

Low Noise Figure, High Gain.

NF=1.1dB, |S

21e

=13dB (f=1GHz).

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

CBO

CEO

EBO

stg

RATING

1.5

150

-55 150

UNIT

DIM

MILLIMETERS

2.93 + 0.20

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

1. EMITTER

2. BASE

3. COLLECTOR

SOT-23

Marking

Rank

Lot No.

Type Name

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector Output Capacitance

Reverse Transfer Capacitance

Transition Frequency

Insertion Gain

21e

(2)

NF (1)

Noise Figure

NF (2)

=8V, I

=5mA, f=2GHz

1.7

Note 1 : h

Classification

H:50~100, J:80~160, K:125~250

Note 2 : C

is measured by 3 terminal method with capacitance bridge.

=8V, I

=20mA, f=2GHz

=8V, I

=5mA, f=1GHz

1.1

2.5

SYMBOL

CBO

EBO

(Note1)

=10V, I

=0, f=1MHz (Note2)

21e

(1)

=8V, I

=20mA

=8V, I

=20mA, f=1GHz

0.5

0.95

GHz

TEST CONDITION

=10V, I

=1V, I

=8V, I

=20mA

MIN.

TYP.

0.7

MAX.

250

UNIT

2007. 8. 22

Revision No : 0

1/5

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