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TS10P03G

Description
Bridge Rectifiers 10 Amp 200 Volt 200 Amp IFSM
CategoryDiscrete semiconductor    diode   
File Size197KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TS10P03G Overview

Bridge Rectifiers 10 Amp 200 Volt 200 Amp IFSM

TS10P03G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSFM-T4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage200 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeR-PSFM-T4
Humidity sensitivity level1
Maximum non-repetitive peak forward current200 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal surfacePure Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
TS10P01G - TS10P07G
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 1000V Glass Passivated Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Typical I
R
less than 0.1μA
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
+
~
~ –
TS-6P
MECHANICAL DATA
Case:
TS-6P
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
8.17 in-lbs maximum
Weight:
7.15 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@5A
@ 10 A
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
TS10P TS10P TS10P TS10P TS10P TS10P TS10P
01G
50
35
50
02G
100
70
100
03G
200
140
200
04G
400
280
400
10
200
166
1.0
1.1
10
500
1.4
- 55 to +150
- 55 to +150
05G
600
420
600
06G
800
560
800
07G
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
I
R
R
θJC
T
J
T
STG
μA
°C/W
°C
°C
Document Number: DS_D1411002
Version: J15
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